<p>Anisotropic strain engineering in epitaxial oxide films provides new opportunities to control the antiferromagnetic and structural properties crucial for advancements of antiferromagnetic spintronics. Here we report on a (La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/LaFeO<sub>3</sub>)<sub>4</sub> superlattice grown on (101)<sub>o</sub> DyScO<sub>3</sub> substrate which imposes significant anisotropic in-plane strain. Reciprocal space mapping reveals selective strain relaxation along the tensile in-plane [010]<sub>o</sub> axis, while compression along the perpendicular in-plane [<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\:\stackrel{-}{1}01\)</EquationSource> </InlineEquation>]<sub>o</sub> axis remains strained. Scanning precession electron diffraction and higher-order Laue zone analysis show that the relaxation is accommodated by structural domain formation in the LaFeO<sub>3</sub> layers, initiating from the second bilayer and propagating out-of-plane. These domains minimise structural defects and correlate with the substrate step edges. X-ray magnetic dichroism measurements reveal bulk-like in-plane antiferromagnetic order with polydomain signature as previously reported. Our findings reveal the presence of structural domains coexisting with antiferromagnetic polydomain states, showing a strain-domain-magnetism relationship that provides insights for applications of strain engineering in spintronics applications.</p>

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Structural relaxation and domain formation in anisotropically strained La0.7Sr0.3MnO3/LaFeO3 superlattices on DyScO3(101)

  • Yu Liu,
  • Thea Marie Dale,
  • Emma van der Minne,
  • Susanne Boucher,
  • Romar Avila,
  • Christoph Klewe,
  • Gertjan Koster,
  • Magnus Nord,
  • Mari-Ann Einarsrud,
  • Ingrid Hallsteinsen

摘要

Anisotropic strain engineering in epitaxial oxide films provides new opportunities to control the antiferromagnetic and structural properties crucial for advancements of antiferromagnetic spintronics. Here we report on a (La0.7Sr0.3MnO3/LaFeO3)4 superlattice grown on (101)o DyScO3 substrate which imposes significant anisotropic in-plane strain. Reciprocal space mapping reveals selective strain relaxation along the tensile in-plane [010]o axis, while compression along the perpendicular in-plane [ \(\:\stackrel{-}{1}01\) ]o axis remains strained. Scanning precession electron diffraction and higher-order Laue zone analysis show that the relaxation is accommodated by structural domain formation in the LaFeO3 layers, initiating from the second bilayer and propagating out-of-plane. These domains minimise structural defects and correlate with the substrate step edges. X-ray magnetic dichroism measurements reveal bulk-like in-plane antiferromagnetic order with polydomain signature as previously reported. Our findings reveal the presence of structural domains coexisting with antiferromagnetic polydomain states, showing a strain-domain-magnetism relationship that provides insights for applications of strain engineering in spintronics applications.