Structural relaxation and domain formation in anisotropically strained La0.7Sr0.3MnO3/LaFeO3 superlattices on DyScO3(101)
摘要
Anisotropic strain engineering in epitaxial oxide films provides new opportunities to control the antiferromagnetic and structural properties crucial for advancements of antiferromagnetic spintronics. Here we report on a (La0.7Sr0.3MnO3/LaFeO3)4 superlattice grown on (101)o DyScO3 substrate which imposes significant anisotropic in-plane strain. Reciprocal space mapping reveals selective strain relaxation along the tensile in-plane [010]o axis, while compression along the perpendicular in-plane [