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<p>Chromium doped V<sub>2</sub>O<sub>3</sub> polycrystalline thin films typically consist of conductive grains separated by insulating grain boundaries. We investigate the origin of the spatially inhomogeneous resistivity in these films and find no qualitative differences between doped and undoped films, or for different oxygen stoichiometries. By a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and nanoscale elemental mapping, we show that the inhomogeneity is due to the formation of amorphous or poorly crystallized regions at the grain boundaries. Both the distribution of the dopants and the local oxygen stoichiometry appear to be very homogeneous, and therefore do not contribute to the inhomogeneous conductivity.</p>

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Origin of the inhomogeneous nanoscale resistivity in chromium doped V2O3

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年5月6日

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  • Johannes Mohr,
  • Yudi Wang,
  • Xiaoyu Xu,
  • Ruilin Wang,
  • Dirk J. Wouters,
  • Rainer Waser,
  • Joyeeta Nag,
  • Daniel Bedau

摘要

Chromium doped V2O3 polycrystalline thin films typically consist of conductive grains separated by insulating grain boundaries. We investigate the origin of the spatially inhomogeneous resistivity in these films and find no qualitative differences between doped and undoped films, or for different oxygen stoichiometries. By a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and nanoscale elemental mapping, we show that the inhomogeneity is due to the formation of amorphous or poorly crystallized regions at the grain boundaries. Both the distribution of the dopants and the local oxygen stoichiometry appear to be very homogeneous, and therefore do not contribute to the inhomogeneous conductivity.