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<p>Several conceptual nanodevices based on the four-atom-layer <i>α</i>- and <i>β</i>-Ge<sub>2</sub>Y<sub>2</sub> are constructed, and their electronic transport and photoelectronic properties are revealed by means of first-principles calculations. Our results demonstrate that the Ge<sub>2</sub>Y<sub>2</sub>-based <i>p–n</i> junction diodes show a great rectifying effect with high rectification ratio. Their<i> p–i–n</i> junction transistors show a field-effect behavior with better rectifying effect and stronger electronical anisotropy. Moreover, the Ge<sub>2</sub>Y<sub>2</sub> monolayers have strong photoelectronic response in the visible light region, displaying excellent photoelectronic properties in the photovoltaic materials and photoelectronic transistors. Our findings uncover the multi-functional features of four-atom-layer Ge<sub>2</sub>Y<sub>2</sub> monolayers, promising their extensive applications as candidates for future flexible semiconductor devices.</p>

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Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N)

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月29日

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  • Jiabao Liao,
  • Nan Fei,
  • Shujin Guo,
  • Yipeng An,
  • Guoping Zhao

摘要

Several conceptual nanodevices based on the four-atom-layer α- and β-Ge2Y2 are constructed, and their electronic transport and photoelectronic properties are revealed by means of first-principles calculations. Our results demonstrate that the Ge2Y2-based p–n junction diodes show a great rectifying effect with high rectification ratio. Their p–i–n junction transistors show a field-effect behavior with better rectifying effect and stronger electronical anisotropy. Moreover, the Ge2Y2 monolayers have strong photoelectronic response in the visible light region, displaying excellent photoelectronic properties in the photovoltaic materials and photoelectronic transistors. Our findings uncover the multi-functional features of four-atom-layer Ge2Y2 monolayers, promising their extensive applications as candidates for future flexible semiconductor devices.