We present an experimental study on optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells near the crossover between \(\varGamma\) - and X-valley confined electron states. The time-integrated photoluminescence experiment at T=4.8 K revealed three simultaneously observed optical transitions resulting from (a) a direct exciton recombination, involving an electron and a hole states both located in the \(\varGamma\) -valley in the quantum well layer, and (b) two spatially and momentum indirect excitons, comprising of the confined electron states in the X-valley in the AlAs barrier with different effective masses and quantum well holes in the \(\varGamma\) -valley. This interpretation has been based on the optical pumping density-dependent, temperature-dependent and spatially-resolved photoluminescence measurements, which provided the characterization of the structure, crucial in potential system’s applications. Additionally, the time-resolved photoluminescence experiments unveiled complex carrier relaxation dynamics in the investigated quantum well system, which is strongly governed by a non-radiative carrier recombination - the characteristics further critical in potential system’s use. This solid state platform hosting both direct and indirect excitons in a highly tunable monolithic system can benefit and underline the operation principles of novel electronic and photonic devices.
