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<p>A 200&#xa0;mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. A comprehensive statistical analysis of the electrical data revealed a high yield (96%) and low variation in the 200&#xa0;mm scale fabrication. The GFET-QD devices deliver responsivities of 10<sup>5</sup> to 10<sup>6</sup> V/W in the wavelength range from 400 to 1800&#xa0;nm with a response time of 10 ms. The spectral sensitivity compares well to that obtained via similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability over a wide operation range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications.</p>

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Graphene-PbS quantum dot hybrid photodetectors from 200 mm wafer scale processing

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年4月27日

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  • Sha Li,
  • Zhenxing Wang,
  • Bianca Robertz,
  • Daniel Neumaier,
  • Oihana Txoperena,
  • Aranzazu Maestre,
  • Amaia Zurutuza,
  • Chris Bower,
  • Ashley Rushton,
  • Yinglin Liu,
  • Chris Harris,
  • Alexander Bessonov,
  • Surama Malik,
  • Mark Allen,
  • Ivonne Medina-Salazar,
  • Tapani Ryhänen,
  • Max C. Lemme

摘要

A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. A comprehensive statistical analysis of the electrical data revealed a high yield (96%) and low variation in the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 105 to 106 V/W in the wavelength range from 400 to 1800 nm with a response time of 10 ms. The spectral sensitivity compares well to that obtained via similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability over a wide operation range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications.