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<p>Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene has emerged as a promising material for diverse nanophotonics applications. In this study, we investigate how Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene terminal groups (–F, –O–, –OH) influence the performance of a planar thermal emitter with a VO<sub>2</sub>/SiO<sub>2</sub>/Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene structure. By examining four variants of Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene across the 2–20&#xa0;µm spectral range, we demonstrate that the hysteresis loop threshold temperature remains constant for all MXene types due to the VO<sub>2</sub> phase change material. The average differential emissivity (Δε) between the semiconductor and metallic states of VO<sub>2</sub> varies significantly with terminal group composition. The VO<sub>2</sub>/SiO<sub>2</sub>/Ti<sub>3</sub>C<sub>2</sub>F<sub>2</sub> structure exhibits the highest differential emissivity of Δε = 0.42, while VO<sub>2</sub>/SiO<sub>2</sub>/Ti<sub>3</sub>C<sub>2</sub>(OH)<sub>2</sub> shows the lowest of Δε = 0.33. The remaining structures; VO<sub>2</sub>/SiO<sub>2</sub>/Ti<sub>3</sub>C<sub>2</sub> and VO<sub>2</sub>/SiO<sub>2</sub>/Ti<sub>3</sub>C<sub>2</sub>O<sub>2</sub>, demonstrate intermediate differential emissivity values of Δε = 0.41 and 0.38, respectively. These findings establish a foundation for controlling emissivity in applications such as energy harvesting, thermophotovoltaics, and radiative cooling systems. The ability to tailor thermal emission through MXene terminal group engineering presents opportunities for designing tunable photonic devices with precise thermal control capabilities for the next-generation of energy management systems.</p>

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Terminal group engineering of Ti3C2Tx MXene on thermal emitter performance

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月12日

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  • Neda Daliran,
  • Ali Reza Oveisi,
  • Saba Daliran

摘要

Ti3C2Tx MXene has emerged as a promising material for diverse nanophotonics applications. In this study, we investigate how Ti3C2Tx MXene terminal groups (–F, –O–, –OH) influence the performance of a planar thermal emitter with a VO2/SiO2/Ti3C2Tx MXene structure. By examining four variants of Ti3C2Tx MXene across the 2–20 µm spectral range, we demonstrate that the hysteresis loop threshold temperature remains constant for all MXene types due to the VO2 phase change material. The average differential emissivity (Δε) between the semiconductor and metallic states of VO2 varies significantly with terminal group composition. The VO2/SiO2/Ti3C2F2 structure exhibits the highest differential emissivity of Δε = 0.42, while VO2/SiO2/Ti3C2(OH)2 shows the lowest of Δε = 0.33. The remaining structures; VO2/SiO2/Ti3C2 and VO2/SiO2/Ti3C2O2, demonstrate intermediate differential emissivity values of Δε = 0.41 and 0.38, respectively. These findings establish a foundation for controlling emissivity in applications such as energy harvesting, thermophotovoltaics, and radiative cooling systems. The ability to tailor thermal emission through MXene terminal group engineering presents opportunities for designing tunable photonic devices with precise thermal control capabilities for the next-generation of energy management systems.