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<p>This study investigates the colossal permittivity (CP) and humidity resistance of (Sn<sub>1/2</sub>Nb<sub>1/2</sub>)<sub>0.025</sub>Ti<sub>0.975</sub>O<sub>2</sub> ceramics. Increasing the sintering temperature enhanced both density and grain growth, with the fine–grained structure proving essential for achieving a high dielectric constant (ε′ ~ 2.2 × 10<sup>4</sup>) and maintaining low dissipation factors (tanδ ~ 0.011) at a reduced sintering temperature of 1150&#xa0;°C. At an elevated sintering temperature of 1210&#xa0;°C, optimal dielectric properties were observed, yielding ε′ ~ 1.0 × 10<sup>4</sup> and an ultra–low tanδ of ~ 0.004, attributed to highly resistive grain boundaries. The CP response is linked to semiconducting grains, supported by the presence of Ti<sup>3+</sup> resulting from Ti<sup>4+</sup> substitution by Nb<sup>5+</sup>. The minimal variation in ε′ with temperature suggests suitability for capacitor applications, with ε′ exhibiting little dependence on DC bias (0–30&#xa0;V/mm). Optimized sintering conditions yielded stable CP properties with minimal sensitivity to humidity (30%–90% RH) over a range of temperatures (25–85&#xa0;°C) and frequencies (10<sup>2</sup>–10<sup>6</sup>&#xa0;Hz). These findings underscore the potential of (Sn<sub>1/2</sub>Nb<sub>1/2</sub>)<sub>0.025</sub>Ti<sub>0.975</sub>O<sub>2</sub> ceramics for advanced capacitors in varied environmental and operational conditions.</p>

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Optimization of low sintering temperature for colossal permittivity and humidity resistance in TiO2 based ceramics

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月8日

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  • Yasumin Mingmuang,
  • Narong Chanlek,
  • Masaki Takesada,
  • Ekaphan Swatsitang,
  • Prasit Thongbai

摘要

This study investigates the colossal permittivity (CP) and humidity resistance of (Sn1/2Nb1/2)0.025Ti0.975O2 ceramics. Increasing the sintering temperature enhanced both density and grain growth, with the fine–grained structure proving essential for achieving a high dielectric constant (ε′ ~ 2.2 × 104) and maintaining low dissipation factors (tanδ ~ 0.011) at a reduced sintering temperature of 1150 °C. At an elevated sintering temperature of 1210 °C, optimal dielectric properties were observed, yielding ε′ ~ 1.0 × 104 and an ultra–low tanδ of ~ 0.004, attributed to highly resistive grain boundaries. The CP response is linked to semiconducting grains, supported by the presence of Ti3+ resulting from Ti4+ substitution by Nb5+. The minimal variation in ε′ with temperature suggests suitability for capacitor applications, with ε′ exhibiting little dependence on DC bias (0–30 V/mm). Optimized sintering conditions yielded stable CP properties with minimal sensitivity to humidity (30%–90% RH) over a range of temperatures (25–85 °C) and frequencies (102–106 Hz). These findings underscore the potential of (Sn1/2Nb1/2)0.025Ti0.975O2 ceramics for advanced capacitors in varied environmental and operational conditions.