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<p>We present a fundamental study of the band alignment at the interface of HfZrO<sub>4</sub> (HZO) with Ge-doped Ga<sub>2</sub>O<sub>3</sub>. Ge is an alternative <i>n</i>-type dopant for the wide band gap Ga<sub>2</sub>O<sub>3</sub> due to its shallow donor level and favorable MBE growth conditions. In the perspective of using the ferroelectric polarization of hafnia based oxides, we have used a stack of HZO on highly Ge doped Ga<sub>2</sub>O<sub>3</sub>, the latter providing high carrier density. Electrical contacts were ensured by a TiN top electrode deposited on the HZO and an Au pad on the Ge:Ga<sub>2</sub>O<sub>3</sub>. The band alignment was measured by carrying out hard X-ray photoelectron spectroscopy (HAXPES) with in situ bias application across the HZO and following the evolution of both HZO and Ga<sub>2</sub>O<sub>3</sub> energy level. Complementary high-resolution transmission electron microscopy (HRTEM) provided structural confirmation of the polar orthorhombic phase however electrical characterization showed that charge injection and trapping at the interface prevents stabilizing the ferroelectric polarization in HZO. The band alignment in the presence of a leaky HZO layer is therefore dominated by the bias induced band skewing.</p>

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Bias dependent band alignment in Ga2O3 ferroelectric interface by operando HAXPES

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年3月7日

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  • Anthony Boucly,
  • Tyson C. Back,
  • Thaddeus J. Asel,
  • Brenton A. Noesges,
  • Amber N. Reed,
  • Sabyasachi Ganguli,
  • Jonathan Ludwick,
  • Cynthia Bowers,
  • Krishnamurthy Mahalingam,
  • Sylvia Matzen,
  • Nick Barrett

摘要

We present a fundamental study of the band alignment at the interface of HfZrO4 (HZO) with Ge-doped Ga2O3. Ge is an alternative n-type dopant for the wide band gap Ga2O3 due to its shallow donor level and favorable MBE growth conditions. In the perspective of using the ferroelectric polarization of hafnia based oxides, we have used a stack of HZO on highly Ge doped Ga2O3, the latter providing high carrier density. Electrical contacts were ensured by a TiN top electrode deposited on the HZO and an Au pad on the Ge:Ga2O3. The band alignment was measured by carrying out hard X-ray photoelectron spectroscopy (HAXPES) with in situ bias application across the HZO and following the evolution of both HZO and Ga2O3 energy level. Complementary high-resolution transmission electron microscopy (HRTEM) provided structural confirmation of the polar orthorhombic phase however electrical characterization showed that charge injection and trapping at the interface prevents stabilizing the ferroelectric polarization in HZO. The band alignment in the presence of a leaky HZO layer is therefore dominated by the bias induced band skewing.