Scholarlink

<p>As the electromagnetic environment becomes increasingly complex and power density continues to increase, the reliability and safe operation of gallium nitride (GaN) high electron mobility transistors (HEMTs), which are widely used in the field of high-power radio frequency amplifiers, are severely jeopardized. In this study, the effects and mechanism of high-power microwave on AlGaN/GaN HEMT power amplifiers were explored. A novel effect phenomenon, which is entirely distinct from the reported high-power microwave damage mechanism of GaN devices, was uncovered. This phenomenon exhibits extremely strong field effect characteristics. Through further effect experiments and numerical simulations, it was affirmed that the failure mechanism is as follows: high-power microwave couples to the drain electrode, creating a high electric field, leading to avalanche breakdown near the gate and below the drain electrodes, forming a leakage channel. Subsequently, under the action of the device’s bias voltage, extensive burning of the device occurs, which is a stimulating burnout effect.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Damage effects in GaN high electron mobility transistor power amplifier induced by high power microwave pulses

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年2月18日

查看全文
  • Jingtao Zhao,
  • Gang Zhao,
  • Quanyou Chen,
  • Zidong Chen,
  • Lei Cao,
  • Xixi Feng,
  • Zhong Liu,
  • Chaoyang Chen

摘要

As the electromagnetic environment becomes increasingly complex and power density continues to increase, the reliability and safe operation of gallium nitride (GaN) high electron mobility transistors (HEMTs), which are widely used in the field of high-power radio frequency amplifiers, are severely jeopardized. In this study, the effects and mechanism of high-power microwave on AlGaN/GaN HEMT power amplifiers were explored. A novel effect phenomenon, which is entirely distinct from the reported high-power microwave damage mechanism of GaN devices, was uncovered. This phenomenon exhibits extremely strong field effect characteristics. Through further effect experiments and numerical simulations, it was affirmed that the failure mechanism is as follows: high-power microwave couples to the drain electrode, creating a high electric field, leading to avalanche breakdown near the gate and below the drain electrodes, forming a leakage channel. Subsequently, under the action of the device’s bias voltage, extensive burning of the device occurs, which is a stimulating burnout effect.