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<p>In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. We utilized a two-step numerical simulation approach grounded in the Schrödinger-Poisson equations to evaluate the performance of our proposed device and accurately calculate the ON-state current. Additionally, we assessed the influence of defects at the heterojunction on the performance of our device. Under quantum mechanical assumptions, parameters such as <i>I</i><sub>ON</sub> = 23.8 µA/µm, <i>SS</i><sub>AVG</sub> = 12.03 mV/dec, and the <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio = 4.88 × 10<sup>10</sup> indicate that our structure is a promising candidate for high-performance applications.</p>

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Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年2月8日

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  • Iman Chahardah Cherik,
  • Saeed Mohammadi,
  • Paul K. Hurley,
  • Lida Ansari,
  • Farzan Gity

摘要

In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. We utilized a two-step numerical simulation approach grounded in the Schrödinger-Poisson equations to evaluate the performance of our proposed device and accurately calculate the ON-state current. Additionally, we assessed the influence of defects at the heterojunction on the performance of our device. Under quantum mechanical assumptions, parameters such as ION = 23.8 µA/µm, SSAVG = 12.03 mV/dec, and the ION/IOFF ratio = 4.88 × 1010 indicate that our structure is a promising candidate for high-performance applications.