Scholarlink

<p>Understanding the thermal influence on gallium nitride (GaN) single crystal substrates is critical for the advancement of GaN-based optoelectronic devices. In this study, we comprehensively characterized the thermal effects on the optical properties of silicon-doped GaN substrates using spectroscopic ellipsometry over a broad wavelength range from 250 nm to 1600 nm. The dielectric function of GaN was determined at temperatures ranging from 298 K to 873 K, demonstrating consistent temperature-dependent behavior. The exciton transitions were precisely characterized and modeled using the empirical Varshni expression. Moreover, we report, for the first time, the thermo-optic coefficients across the wide spectrum, parameterized using a Sellmeier model. This work significantly expand the GaN optical properties database beyond thin films and provide essential insights for the design and optimization of next-generation GaN-based optoelectronic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年2月3日

查看全文
  • Subiao Bian,
  • Xi Chen,
  • Changcai Cui

摘要

Understanding the thermal influence on gallium nitride (GaN) single crystal substrates is critical for the advancement of GaN-based optoelectronic devices. In this study, we comprehensively characterized the thermal effects on the optical properties of silicon-doped GaN substrates using spectroscopic ellipsometry over a broad wavelength range from 250 nm to 1600 nm. The dielectric function of GaN was determined at temperatures ranging from 298 K to 873 K, demonstrating consistent temperature-dependent behavior. The exciton transitions were precisely characterized and modeled using the empirical Varshni expression. Moreover, we report, for the first time, the thermo-optic coefficients across the wide spectrum, parameterized using a Sellmeier model. This work significantly expand the GaN optical properties database beyond thin films and provide essential insights for the design and optimization of next-generation GaN-based optoelectronic devices.