<p>This work presents a reliability-focused modeling study of trap-induced hysteresis in a heterostructure oxide-engineered double-gated tunnel field-effect transistor based biosensor for breast cancer detection. Our study reveals how interface traps impact threshold voltage shifts, current sensitivity, and overall sensing stability under varying sweep rates and temperatures. We explore the role of trap location by comparing two critical interfaces, InAs-Si at the source-channel tunneling junction and Si-SiO₂ at the channel-oxide interface, revealing that these traps induce more severe hysteresis and signal degradation. A novel detection inaccuracy metric is introduced to quantify sensitivity loss due to reliability degradation, showing up to 97% inaccuracy for healthy biomarker conditions in damaged devices. This study highlights the importance of reliability-aware modeling of trap effects in TFET-based biosensors and provides simulation-based insights into how sweep rate and temperature may influence stable and reproducible sensing behavior.</p>