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<p>Amorphous chitosan nanoparticles (AChNPs) are extracted from marine crab shells for use as the active semiconductor material in paper-based electronics. The <i>I–V</i> characteristics of AChNPs exhibit an electron-driven rectifying behaviour at Schottky junctions. Additionally, when used in metal<i>–</i>semiconductor field-effect transistors (MESFETs), the AChNPs demonstrate an amplification output spanning three orders of magnitude and current modulation with an on/off current ratio of approximately 17,000. Hall effect measurements indicate an <i>n</i>-type semiconductor with a carrier concentration of 8.55 × 10<sup>10</sup>/cm<sup>3</sup>, which corresponds to a mobility of 15.27 cm<sup>2</sup>/Vs and an electric resistivity of 4.79 × 10<sup>6</sup> Ωcm at 298&#xa0;K. The <i>g</i> value of the electron spin resonance (ESR) peak of AChNPs confirms that the electrons are generated from the aminyl N*-H radical, and photoemission yield spectroscopy reveals a gap energy of 5.21&#xa0;eV. The proposed diode and MESFET offer substantial promise for future applications of flexible, renewable, and biodegradable paper-based electronic devices with energy storage properties.</p>

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Schottky-gated transistors using chitosan extracted from marine crab

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月21日

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  • Mikio Fukuhara,
  • Tomonori Yokotsuka,
  • Nobuyuki Kobayashi,
  • Masahiko Kumadaki,
  • Nobuhisa Fujima,
  • Toshiyuki Hashida

摘要

Amorphous chitosan nanoparticles (AChNPs) are extracted from marine crab shells for use as the active semiconductor material in paper-based electronics. The I–V characteristics of AChNPs exhibit an electron-driven rectifying behaviour at Schottky junctions. Additionally, when used in metal–semiconductor field-effect transistors (MESFETs), the AChNPs demonstrate an amplification output spanning three orders of magnitude and current modulation with an on/off current ratio of approximately 17,000. Hall effect measurements indicate an n-type semiconductor with a carrier concentration of 8.55 × 1010/cm3, which corresponds to a mobility of 15.27 cm2/Vs and an electric resistivity of 4.79 × 106 Ωcm at 298 K. The g value of the electron spin resonance (ESR) peak of AChNPs confirms that the electrons are generated from the aminyl N*-H radical, and photoemission yield spectroscopy reveals a gap energy of 5.21 eV. The proposed diode and MESFET offer substantial promise for future applications of flexible, renewable, and biodegradable paper-based electronic devices with energy storage properties.