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<p>A nanocomposite material comprising palladium nanoparticles (PdNPs) doped with polyethyleneimine (PEI)-functionalized nitrogen-doped graphene quantum dots (PEI N-GQDs) was synthesized and employed as an interlayer in an Ag/PdNPs/PEI N-GQDs/p-Si heterojunction configuration. The PdNPs/PEI N-GQDs nanocomposite was prepared through an aqueous reaction between PEI-functionalized N-GQDs and Pd(NO<sub>2</sub>)<sub>2</sub>·H<sub>2</sub>O and characterized using FTIR, UV–Vis, TEM, XPS, and PL spectroscopy. The PL spectrum exhibited a broad emission centered at 580&#xa0;nm (2.14&#xa0;eV) with a near-infrared tail, indicating defect-assisted recombination and confirming the semiconducting nature of the nanocomposite. The Ag/PdNPs/PEI N-GQDs/p-Si diode displayed a rectification ratio of approximately 1.64 × 10<sup>2</sup> at ± 4&#xa0;V, with barrier heights of 0.87, 0.76, and 0.68&#xa0;eV obtained from thermionic-emission&#xa0;(TE), Cheung, and Norde methods, respectively. Energy band alignment analysis revealed that the rectifying behavior originates from the Ag/nanocomposite interface, forming a Schottky-type barrier, while a type-II staggered junction is established at the nanocomposite/p-Si interface, facilitating hole transport. These findings demonstrate the potential of PdNPs/PEI N-GQDs as an effective interlayer material for carbon-based nanoelectronic and optoelectronic devices.</p>

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Electrical performance of a nanocomposite diode based on palladium nanoparticles- and polyethyleneimine functionalized nitrogen-doped graphene quantum dots

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年11月7日

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  • Elanur Dikicioğlu,
  • Halil İbrahim Efkere,
  • Mustafa Yıldız,
  • Elif Orhan

摘要

A nanocomposite material comprising palladium nanoparticles (PdNPs) doped with polyethyleneimine (PEI)-functionalized nitrogen-doped graphene quantum dots (PEI N-GQDs) was synthesized and employed as an interlayer in an Ag/PdNPs/PEI N-GQDs/p-Si heterojunction configuration. The PdNPs/PEI N-GQDs nanocomposite was prepared through an aqueous reaction between PEI-functionalized N-GQDs and Pd(NO2)2·H2O and characterized using FTIR, UV–Vis, TEM, XPS, and PL spectroscopy. The PL spectrum exhibited a broad emission centered at 580 nm (2.14 eV) with a near-infrared tail, indicating defect-assisted recombination and confirming the semiconducting nature of the nanocomposite. The Ag/PdNPs/PEI N-GQDs/p-Si diode displayed a rectification ratio of approximately 1.64 × 102 at ± 4 V, with barrier heights of 0.87, 0.76, and 0.68 eV obtained from thermionic-emission (TE), Cheung, and Norde methods, respectively. Energy band alignment analysis revealed that the rectifying behavior originates from the Ag/nanocomposite interface, forming a Schottky-type barrier, while a type-II staggered junction is established at the nanocomposite/p-Si interface, facilitating hole transport. These findings demonstrate the potential of PdNPs/PEI N-GQDs as an effective interlayer material for carbon-based nanoelectronic and optoelectronic devices.