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<p>This study investigates how adding graphite platelets (G<sub>P</sub>), with and without SiC, affects the oxidation resistance of ZrB₂ ceramics. The specimens—ZrB₂-10G<sub>P</sub>, ZrB₂-15G<sub>P</sub>, ZrB₂-15SiC, ZrB₂-30SiC, ZrB₂-30SiC-10G<sub>P</sub>, and ZrB₂-30SiC-15G<sub>P</sub>—were sintered at 1850&#xa0;°C for 8 min via spark plasma sintering (SPS). For oxidation evaluation, the samples were exposed to air in the furnace at a temperature of 1450&#xa0;°C for different times (30, 60, 90, 120, 180, 300 min). Also, the simultaneous thermogravimetric analysis (TGA) and differential thermal analysis (DTA) up to 1200&#xa0;°C were applied to investigate the in situ oxidation. FESEM and EDS were utilized to perform microstructural and elemental analyses on the cross-sections of various oxide layers. It was disclosed that the G<sub>P</sub> and SiC both improve the oxidation resistance. The best oxidation resistances were obtained in the ZrB₂-30SiC and ZrB₂-30SiC-10G<sub>P</sub> with the lowest oxidation layer thicknesses of 38 ± 3 µm and 40 ± 4 µm, respectively. Also, the lowest oxidation resistance was obtained in pure ZrB<sub>2</sub> with the highest oxide layer thickness of 129 ± 5 µm. The formation of an adherent oxide layer is the dominant factor for improving the oxidation resistance. The oxidation mechanism of all samples except ZrB<sub>2</sub> was diffusion oxygen-controlled with a parabolic behavior. Also, TGA and DTA analysis showed a mass loss at the initial stage (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\sim\)</EquationSource> </InlineEquation> 200°C ), followed by mass gain at 709&#xa0;°C and 1065°C.</p>

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Synergetic and alone influence of graphite platelet and SiC on the oxidation resistance of ZrB2 ceramics

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  • 发表日期：

    2025年11月24日

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  • Hamze Ghanbari Nezhad,
  • Zohre Balak

摘要

This study investigates how adding graphite platelets (GP), with and without SiC, affects the oxidation resistance of ZrB₂ ceramics. The specimens—ZrB₂-10GP, ZrB₂-15GP, ZrB₂-15SiC, ZrB₂-30SiC, ZrB₂-30SiC-10GP, and ZrB₂-30SiC-15GP—were sintered at 1850 °C for 8 min via spark plasma sintering (SPS). For oxidation evaluation, the samples were exposed to air in the furnace at a temperature of 1450 °C for different times (30, 60, 90, 120, 180, 300 min). Also, the simultaneous thermogravimetric analysis (TGA) and differential thermal analysis (DTA) up to 1200 °C were applied to investigate the in situ oxidation. FESEM and EDS were utilized to perform microstructural and elemental analyses on the cross-sections of various oxide layers. It was disclosed that the GP and SiC both improve the oxidation resistance. The best oxidation resistances were obtained in the ZrB₂-30SiC and ZrB₂-30SiC-10GP with the lowest oxidation layer thicknesses of 38 ± 3 µm and 40 ± 4 µm, respectively. Also, the lowest oxidation resistance was obtained in pure ZrB2 with the highest oxide layer thickness of 129 ± 5 µm. The formation of an adherent oxide layer is the dominant factor for improving the oxidation resistance. The oxidation mechanism of all samples except ZrB2 was diffusion oxygen-controlled with a parabolic behavior. Also, TGA and DTA analysis showed a mass loss at the initial stage ( \(\sim\) 200°C ), followed by mass gain at 709 °C and 1065°C.