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<p>The gas-sensing potential of transition metal dichalcogenides (TMDs) drew attention owing to their high surface sensitivity and tunable optoelectronic features. Among the TMDs, monolayer MoS<sub>2</sub> stands out as a promising material for advanced gas sensors. However, TMDs-based gas sensors still require considerable improvement in room temperature sensitivity, response times, and stability, which may be achievable through alterations in kinetics. Herein, we report a highly sensitive NH<sub>3</sub> gas sensor based on monolayer MoS<sub>2</sub>, whose sensing performance is greatly enhanced by defect engineering and photonic activation. Intestinally induced sulfur vacancies create chemically active adsorption sites, increasing adsorption energy and enhancing charge transfer between NH<sub>3</sub> molecules and MoS<sub>2</sub>. On the other hand, visible-light illumination stimulates photoresponsivity by generating electron-hole pairs to speed up desorption and recovery time. With these combined stimuli, very large modulations to the electronic band structure occur, thus enhancing the gas-surface interaction dynamics and hence sensing performance. Thus, this study highlights the potential of defect-engineered and photonic-activated monolayer MoS<sub>2</sub> as a strong candidate for advanced gas detection and presents a scalable pathway for next-generation sensor development, meeting the demands of environmental and industrial monitoring.</p>

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Enhancement in hazardous gas detection capabilities of MoS2 monolayer-based devices through defect engineering and photonic activation

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年11月7日

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  • Pukhraj Prajapat,
  • Anis Ahmad Chaudhary,
  • Aditya Yadav,
  • Vaibhav Kandwal,
  • Pargam Vashishtha,
  • Mohamed A. M. Ali,
  • Sumeet Walia,
  • Govind Gupta

摘要

The gas-sensing potential of transition metal dichalcogenides (TMDs) drew attention owing to their high surface sensitivity and tunable optoelectronic features. Among the TMDs, monolayer MoS2 stands out as a promising material for advanced gas sensors. However, TMDs-based gas sensors still require considerable improvement in room temperature sensitivity, response times, and stability, which may be achievable through alterations in kinetics. Herein, we report a highly sensitive NH3 gas sensor based on monolayer MoS2, whose sensing performance is greatly enhanced by defect engineering and photonic activation. Intestinally induced sulfur vacancies create chemically active adsorption sites, increasing adsorption energy and enhancing charge transfer between NH3 molecules and MoS2. On the other hand, visible-light illumination stimulates photoresponsivity by generating electron-hole pairs to speed up desorption and recovery time. With these combined stimuli, very large modulations to the electronic band structure occur, thus enhancing the gas-surface interaction dynamics and hence sensing performance. Thus, this study highlights the potential of defect-engineered and photonic-activated monolayer MoS2 as a strong candidate for advanced gas detection and presents a scalable pathway for next-generation sensor development, meeting the demands of environmental and industrial monitoring.