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<p>“In situ” argon (Ar<sup>+</sup>) ion non-reactive successive sputtering/etching process was used to produce ultrathin films of indium tin oxide nanomaterial. In each sputter/etch-cycle (τ<sub>etch</sub> = 300s), x-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UV PES) were measured and studied their change of electronic/bonding/atomic structure, density-of-states (DOS), valence band maximum (VBM), and work functions of the ultrathin films of indium-tin-oxide nanomaterial. During Ar<sup>+</sup>-ion non-reactive successive sputtering/etching process ((τ<sub>etch</sub> = 0–1800&#xa0;s) the thicknesses are reducing from 100&#xa0;nm (ITO) ≈ 2.0&#xa0;nm (ultrathin films of indium-tin-oxide). These results were further revealed with the “<i>ex-situ</i>” HR-SEM, HR-TEM, AFM, XRD, Raman, and x-ray absorption near edge structure (XANES) spectroscopy measurements, where a small shift of the Raman mode (A<sub>1g</sub>) peak with reduced intensity and XANES edge-shift with change in line shape/intensities further confirmed the formation of ultrathin films of indium-tin-oxide nanomaterial. The SEM/TEM/AFM of Ar<sup>+</sup>-ion sputtered/etched (τ<sub>etch</sub> = 1800&#xa0;s) of these films are considered as an alternative technique to make ultrathin films of indium-tin-oxide nanomaterial for the fabrication of future electronic/optoelectronic/photovoltaic devices.</p>

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Change of electronic structure of ultrathin film of indium tin oxide by “In situ” Ar+ ion non-reactive successive etching process

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  • 发表日期：

    2025年10月27日

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  • Sekhar Chandra Ray,
  • W. F. Pong

摘要

“In situ” argon (Ar+) ion non-reactive successive sputtering/etching process was used to produce ultrathin films of indium tin oxide nanomaterial. In each sputter/etch-cycle (τetch = 300s), x-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UV PES) were measured and studied their change of electronic/bonding/atomic structure, density-of-states (DOS), valence band maximum (VBM), and work functions of the ultrathin films of indium-tin-oxide nanomaterial. During Ar+-ion non-reactive successive sputtering/etching process ((τetch = 0–1800 s) the thicknesses are reducing from 100 nm (ITO) ≈ 2.0 nm (ultrathin films of indium-tin-oxide). These results were further revealed with the “ex-situ” HR-SEM, HR-TEM, AFM, XRD, Raman, and x-ray absorption near edge structure (XANES) spectroscopy measurements, where a small shift of the Raman mode (A1g) peak with reduced intensity and XANES edge-shift with change in line shape/intensities further confirmed the formation of ultrathin films of indium-tin-oxide nanomaterial. The SEM/TEM/AFM of Ar+-ion sputtered/etched (τetch = 1800 s) of these films are considered as an alternative technique to make ultrathin films of indium-tin-oxide nanomaterial for the fabrication of future electronic/optoelectronic/photovoltaic devices.