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<p>Short wavelength infrared (SWIR, 1–2.5&#xa0;μm) photodetection plays a critical role in various applications, including night vision, remote sensing and optical communication. Conventional SWIR photodetectors, such as InGaAs and HgCdTe-based devices, face several challenges related to high fabrication costs, heterogeneous integration limitations of silicon Read-Out Integrated Circuit and environmental concerns. This study propose a Te<sub>0.7</sub>Se<sub>0.3</sub> alloy thin film-based dual-gate phototransistor with a high-performance and cost-effective alternative for SWIR photodetection with spectral range of 1300&#xa0;nm. By employing Te-Se alloy thin film as an active channel material, the both SWIR absorption and low off current state of thin film transistor (TFT) were successfully achieved. Furthermore, the dual-gate TFT device architecture, featuring a top electrode of Indium Tin Oxide with excellent SWIR transmittance (~ 77%) enhances charge carrier separation via an intrinsic built-in field. The proposed device exhibits an excellent SWIR detection performance, demonstrating a responsivity of 559.3&#xa0;A/W at 1300&#xa0;nm wavelength range.</p>

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Enhanced SWIR photodetection in Te0.7Se0.3 alloy based phototransistors with spectral range of 1300 nm via dual-gate engineering

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月24日

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  • Seungwoo Baek,
  • Byeongjin Park,
  • Jonghoon Lee,
  • Kyung-jin Hyun,
  • Jung-Dae Kwon,
  • Jongwon Yoon,
  • Yujin Lee,
  • Seock-Jin Jeong,
  • Soon-Yong Kwon,
  • Hong Seung Kim,
  • Yonghun Kim

摘要

Short wavelength infrared (SWIR, 1–2.5 μm) photodetection plays a critical role in various applications, including night vision, remote sensing and optical communication. Conventional SWIR photodetectors, such as InGaAs and HgCdTe-based devices, face several challenges related to high fabrication costs, heterogeneous integration limitations of silicon Read-Out Integrated Circuit and environmental concerns. This study propose a Te0.7Se0.3 alloy thin film-based dual-gate phototransistor with a high-performance and cost-effective alternative for SWIR photodetection with spectral range of 1300 nm. By employing Te-Se alloy thin film as an active channel material, the both SWIR absorption and low off current state of thin film transistor (TFT) were successfully achieved. Furthermore, the dual-gate TFT device architecture, featuring a top electrode of Indium Tin Oxide with excellent SWIR transmittance (~ 77%) enhances charge carrier separation via an intrinsic built-in field. The proposed device exhibits an excellent SWIR detection performance, demonstrating a responsivity of 559.3 A/W at 1300 nm wavelength range.