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<p>This study investigates how channel length (<i>L</i>) affects the temperature dependence of the apparent subthreshold swing (<i>SS</i><sup>*</sup>) in self-aligned top-gate coplanar indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). Our experimental results demonstrate that <i>SS</i><sup>*</sup> increases with temperature for devices with <i>L</i> = 5&#xa0;μm and 7&#xa0;μm, yet decreases for devices with <i>L</i> = 10&#xa0;μm. To elucidate this behavior, we developed a drain current model based on surface potential. Our analysis reveals that variations in the dominant carrier populations (trapped versus free electrons) within the <i>SS</i><sup>*</sup> extraction range dictate the observed temperature dependence of <i>SS</i><sup>*</sup>. Furthermore, the lateral diffusion of donor impurities in our fabricated structures leads to notable differences in the effective channel length across TFTs with varying <i>L</i>s, thereby amplifying these trends. These findings offer crucial insights into the physical mechanisms underlying the channel-length-dependent temperature behavior of <i>SS</i><sup>*</sup> in IGZO TFTs. This understanding is vital for enhancing the stability of active-matrix organic light-emitting diode displays that utilize IGZO TFTs as backplanes.</p>

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Effects of channel length on temperature dependence of apparent subthreshold swing in self-aligned top-gate coplanar IGZO thin-film transistors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年10月6日

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  • Chae-Eun Oh,
  • Hwan-Seok Jeong,
  • Su-Hyeon Lee,
  • Hyeon-Woo Lee,
  • Dong-Hwi Son,
  • Chang-Hyeon Kim,
  • Myeong-Ho Kim,
  • Kyoung-Seok Son,
  • Jun Hyung Lim,
  • Sang-Hun Song,
  • Hyuck-In Kwon

摘要

This study investigates how channel length (L) affects the temperature dependence of the apparent subthreshold swing (SS*) in self-aligned top-gate coplanar indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). Our experimental results demonstrate that SS* increases with temperature for devices with L = 5 μm and 7 μm, yet decreases for devices with L = 10 μm. To elucidate this behavior, we developed a drain current model based on surface potential. Our analysis reveals that variations in the dominant carrier populations (trapped versus free electrons) within the SS* extraction range dictate the observed temperature dependence of SS*. Furthermore, the lateral diffusion of donor impurities in our fabricated structures leads to notable differences in the effective channel length across TFTs with varying Ls, thereby amplifying these trends. These findings offer crucial insights into the physical mechanisms underlying the channel-length-dependent temperature behavior of SS* in IGZO TFTs. This understanding is vital for enhancing the stability of active-matrix organic light-emitting diode displays that utilize IGZO TFTs as backplanes.