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<p>A novel thermoelectricity-amplified transistor model based on thermoelectric (TE) materials is proposed, which synergistically integrating the Seebeck effect and bipolar junction transistor operation. The design leverages temperature gradient-induced carrier transport in a Bi-Sb-Te PNP heterojunction in lateral configuration under unidirectional thermal excitation. By combining voltage generation from the Seebeck effect (Δ<i>T</i>-driven) with the inherent current amplification of transistors, this self-powered device demonstrates enhanced energy conversion capabilities without requiring external bias. Numerical simulations demonstrated that under a 50&#xa0;K thermal gradient, the optimized single device configuration achieves 102.14 µW output power (<i>P</i><sub>out</sub>) with 1.04% energy conversion efficiency (<i>η</i>), showcasing its viability for low-grade heat recovery applications.</p>

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Output performance of Bi-Sb-Te based thermoelectric-transistor model on parallel temperature gradient

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年9月29日

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  • Tao Guo,
  • Wenjun Wang,
  • Jie Chen,
  • Guiying Xu,
  • Bohang Nan,
  • Shuo Li,
  • Lingling Ren

摘要

A novel thermoelectricity-amplified transistor model based on thermoelectric (TE) materials is proposed, which synergistically integrating the Seebeck effect and bipolar junction transistor operation. The design leverages temperature gradient-induced carrier transport in a Bi-Sb-Te PNP heterojunction in lateral configuration under unidirectional thermal excitation. By combining voltage generation from the Seebeck effect (ΔT-driven) with the inherent current amplification of transistors, this self-powered device demonstrates enhanced energy conversion capabilities without requiring external bias. Numerical simulations demonstrated that under a 50 K thermal gradient, the optimized single device configuration achieves 102.14 µW output power (Pout) with 1.04% energy conversion efficiency (η), showcasing its viability for low-grade heat recovery applications.