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<p>Transistor performance degrades in the presence of radiation due to increased interface trap charges. Radiation analysis is used to determine the impact of radiation level up to which the transistor shows its normal behaviour. The present study investigates the total ionizing dose (TID) impact on the proposed negative capacitance FinFET (NC-FinFET) by replacing SiO<sub>2</sub> oxide layer with a thin ferroelectric material Pb(Zr<sub>y</sub>Ti<sub>1−y</sub>)O<sub>3</sub> (lead zirconate titanate) layer. In this work, radiation-induced trap density (V<sub>og⁺</sub>, V<sub>odH⁺</sub>) analysis further confirms the enhanced charge compensation capability of PZT, thereby mitigating leakage and improving device stability. The comparison is made for fixed structural parameters with specific source/drain and channel regions doping of both transistors. TID effects are observed on drain current, channel electric field, potential, threshold voltage, transconductance and gate capacitances. The simulations were conducted using advanced 3D TCAD CRad tools to evaluate radiation impact on critical device parameters, mainly threshold voltage (V<sub>th</sub>), standby current (I<sub>off</sub>), electrostatic and subthreshold performance. NC-FinFET exhibits a negligible V<sub>th</sub> shift of 0.0056%, superior Ion/Ioff ratio of ~ 10<sup>1</sup>⁰ and improved SS of 39.9&#xa0;mV/dec post-TID, compared to SiO<sub>2</sub> (I<sub>on</sub>/I<sub>off</sub> ~ 10<sup>6</sup>, SS = 50.4&#xa0;mV/dec) and HfO<sub>2</sub> (I<sub>on</sub>/I<sub>off</sub> ~ 10<sup>7</sup>, SS = 38.2&#xa0;mV/dec). These results establish the proposed NC-FinFET as a radiation-hardened solution for next-generation space and defence electronics.</p>

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Design and analysis of NC-FinFET using Pb(ZryTi1−y)O3 under high ionising radiations

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月29日

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  • Suman Lata Tripathi,
  • Neeraj Nayan Prakash,
  • Ashutosh Kumar Yadav,
  • Balwinder Raj,
  • Inung Wijayanto

摘要

Transistor performance degrades in the presence of radiation due to increased interface trap charges. Radiation analysis is used to determine the impact of radiation level up to which the transistor shows its normal behaviour. The present study investigates the total ionizing dose (TID) impact on the proposed negative capacitance FinFET (NC-FinFET) by replacing SiO2 oxide layer with a thin ferroelectric material Pb(ZryTi1−y)O3 (lead zirconate titanate) layer. In this work, radiation-induced trap density (Vog⁺, VodH⁺) analysis further confirms the enhanced charge compensation capability of PZT, thereby mitigating leakage and improving device stability. The comparison is made for fixed structural parameters with specific source/drain and channel regions doping of both transistors. TID effects are observed on drain current, channel electric field, potential, threshold voltage, transconductance and gate capacitances. The simulations were conducted using advanced 3D TCAD CRad tools to evaluate radiation impact on critical device parameters, mainly threshold voltage (Vth), standby current (Ioff), electrostatic and subthreshold performance. NC-FinFET exhibits a negligible Vth shift of 0.0056%, superior Ion/Ioff ratio of ~ 101⁰ and improved SS of 39.9 mV/dec post-TID, compared to SiO2 (Ion/Ioff ~ 106, SS = 50.4 mV/dec) and HfO2 (Ion/Ioff ~ 107, SS = 38.2 mV/dec). These results establish the proposed NC-FinFET as a radiation-hardened solution for next-generation space and defence electronics.