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<p>In this study the emission homogeneity of InGaAs multiple quantum wells (MQW) was investigated. Two sets of samples grown by molecular beam epitaxy, with varying In content and QW thickness as well as barrier thickness, were mapped using room temperature photoluminescence and micro-photoluminescence. The result showed that increasing In content leads to a higher stress accumulation which can lead to the formation of a denser net of lattice mismatch dislocations in the QW layer. Samples with optimized barrier design exhibit uniform emission intensity.</p>

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Comprehensive investigation of emission homogeneity of InGaAs multiple quantum wells using spatially resolved spectroscopy

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年9月25日

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  • Andrea Zelioli,
  • Aivaras Špokas,
  • Bronislovas Čechavičius,
  • Martynas Talaikis,
  • Sandra Stanionytė,
  • Virginijus Bukauskas,
  • Augustas Vaitkevičius,
  • Aurimas Čerškus,
  • Piotr Wojnar,
  • Vitaly Deibuk,
  • Evelina Dudutienė,
  • Renata Butkutė

摘要

In this study the emission homogeneity of InGaAs multiple quantum wells (MQW) was investigated. Two sets of samples grown by molecular beam epitaxy, with varying In content and QW thickness as well as barrier thickness, were mapped using room temperature photoluminescence and micro-photoluminescence. The result showed that increasing In content leads to a higher stress accumulation which can lead to the formation of a denser net of lattice mismatch dislocations in the QW layer. Samples with optimized barrier design exhibit uniform emission intensity.