In this paper, we propose a novel structure with Control Source and Control Gate structured tunnel field-effect transistor (CSCG‑iTFET), which achieves an unprecedentedly steep subthreshold swing (SS) while maintaining high ON-state current ( \(\:{I}_{\text{O}\text{N}}\) ). In addition, using Schottky contacts at the source without doping reduces leakage current and thermal budget. We compared the performance of four different device structures, including conventional Double Gate TFET with Control Gate, iTFET with Control Gate, iTFET with Charge Enhancement Layer and Control Gate, and our structure. The accumulation layer can be enhanced by using the characteristic of Control Source to modulate the voltage. We performed simulation studies using Sentaurus TCAD. Utilize calibrated models for accurate simulations, exploiting the same referenced processes, demonstrate that the Control Source iTFET exhibits an average subthreshold swing S.SAVG of 9.69 mV/Dec and a minimum subthreshold swing S.SMIN of 1.72 mV/Dec, respectively. At VD = 0.2 V, the ION current is 2.95 × 10− 7 A/µm, and the ION/IOFF ratio is 3.84 × 109. It is believed that the performance can be further improved if the fabrication processes are optimized.
