GaN metal-organic vapor phase epitaxy on Sc2O3/Si templates for group III-nitride monolithic integration to Si technology
摘要
In this work, we present a detailed analysis of GaN layers up to 500 nm thick, directly grown on Sc2O3(111)/Si(111) templates using metal-organic vapor phase epitaxy. A range of measurement techniques, including X-ray diffraction, Raman spectroscopy, atomic force microscopy, cathodoluminescence, and scanning electron microscopy (SEM), were used to evaluate structural quality, strain/stress states, surface morphology, and dislocation densities. The micro-stripe formation was observed when the growth was conducted in a nitrogen atmosphere, with the stripes completely disappearing when the growth atmosphere was switched to hydrogen. The stripes were determined to be of a cubic GaN phase. The epitaxial relationships between the cubic GaN crystalline lattice and Sc2O3, Si, and hexagonal GaN were examined in detail. Continuous, c-axis-oriented, monocrystalline GaN layers on Sc2O3 can be achieved in both