This paper presents a model of total ionizing dose (TID) effects on the generation of Si/SiO \(_2\) interface traps in MOS devices, and their density of states across the energy band in a non-uniform manner. The model incorporates the DCIV technique to determine the density of states of interface traps and accounts for quantum tunneling (QT) and thermal emission (TE) effects, which reduce the concentration of protons near the interface, thereby improving the proposed model accuracy. Additionally, considering the trap-assisted tunneling (TAT) mechanism enhances the model’s precision at higher radiation doses. The model achieves an R \(^2\) of 0.9993, with an N-RMSE of 0.0095 and an N-MAE of 0.0085, compared to measurements obtained from the IRF620 transistor under irradiation with TID up to 7.8 Mrad (SiO \(_\text {2}\) ) by a Cobalt-60 source. It exhibits 80.86% and 79.58% in the improvement of RMSE and MAE, respectively, compared to a state-of-the-art models.
