Towards MnN as a replacement for IrMn

There is an urgent need to identify new antiferromagnetic materials that offer a replacement for IrMn alloys for room temperature and above applications. This is driven by the scarcity and high cost of Ir. Recently, MnN with {002} texture grown on a Ta seed layer has been proposed as a cost-effective alternative. However, two key issues need to be addressed before this material can be considered a realistic alternative to IrMn: thick layers of approximately 30 nm are required due to its relatively low magnetocrystalline anisotropy and nitrogen diffusion into the Ta layer at relatively low temperatures results in poor temperature performance. In this work, we show a potential pathway to overcome these issues. By using a W rather than a Ta seed layer, N diffusion is minimized, if not eliminated, at temperatures exceeding \(300\,^{\circ }\hbox {C}\) $300_{}^{\circ }\text{C}$ . Furthermore, preferential {111} growth is achieved and a significantly enhanced anisotropy, \(2.6 \cdot 10^{6}\,\hbox {erg}/\hbox {cm}^{3}\) $2.6·{10}^6\text{erg}/{\text{cm}}^3$ , has been measured. This value is almost identical to that measured for 3D randomly oriented IrMn.