Near-critical Stranski-Krastanov growth of InAs/InP quantum dots

This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanov growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between \(10^7\) ${10}^7$ and \(10^{10}\) ${10}^{10}$   \(\textrm{cm}^{-2}\) ${\text{cm}}^{-2}$ . Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles with well-isolated QD-originated emission lines in the telecom C-band.