A novel method for interfacial energy gap determination
摘要
A precise quantification of energy gap for a molecular semiconductor is crucial. However, there has always been a lack of a suitable method which results in an inaccurate measurement. In this research, a three-terminal vertical structure (Al/AlOX/Au/ molecular semiconductor/Al), named hot electron transistor has been designed to be the most powerful method for energy gap determination. By analysing the IC-hot–VEB curves, the electron injected barrier and hole injected barrier can be extracted. In combination of the both, the energy gap of four objects, including PBDB-T-2Cl, C60, PTCDA, and Alq3, has been determined finally.