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<p>We analytically solve the Landau-Lifshitz equations for the collective magnetization dynamics in a synthetic antiferromagnet (SAF) nanoparticle and uncover a regime of barrier-free switching under a short small-amplitude magnetic field pulse applied perpendicular to the SAF plane. We give examples of specific implementations for forming such low-power and ultra-fast switching pulses. For fully optical, resonant, barrier-free SAF switching we estimate the power per write operation to be <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="41598_2024_67287_Article_IEq1.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="44" /> </InlineMediaObject> <EquationSource Format="TEX">\( \sim 100 \)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mo>∼</mo> <mn>100</mn> </mrow> </math></EquationSource> </InlineEquation>&#xa0;pJ, 10–100 times smaller than for conventional quasi-static rotation, which should be attractive for memory applications.</p>

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Fast barrier-free switching in synthetic antiferromagnets

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月6日

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  • Yu Dzhezherya,
  • V. Kalita,
  • P. Polynchuk,
  • A. Kravets,
  • V. Korenivski,
  • S. Kruchinin,
  • S. Bellucci

摘要

We analytically solve the Landau-Lifshitz equations for the collective magnetization dynamics in a synthetic antiferromagnet (SAF) nanoparticle and uncover a regime of barrier-free switching under a short small-amplitude magnetic field pulse applied perpendicular to the SAF plane. We give examples of specific implementations for forming such low-power and ultra-fast switching pulses. For fully optical, resonant, barrier-free SAF switching we estimate the power per write operation to be \( \sim 100 \) ∼ 100  pJ, 10–100 times smaller than for conventional quasi-static rotation, which should be attractive for memory applications.