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Intermediate multidomain state in single-crystalline Mn-doped BiFeO3 thin films during ferroelectric polarization switching

  • Seiji Nakashima,
  • Koji Kimura,
  • Naohisa Happo,
  • Artoni Kevin R. Ang,
  • Yuta Yamamoto,
  • Halubai Sekhar,
  • Ai I. Osaka,
  • Koichi Hayashi,
  • Hironori Fujisawa

摘要

A intermediate multidomain state and large crystallographic tilting of 1.78° for the (hh0)pc planes of a (001)pc-oriented single-domain Mn-doped BiFeO3 (BFMO) thin film were found when an electric field was applied along the [110]pc direction. The anomalous crystallographic tilting was caused by ferroelastic domain switching of the 109° domain switching. In addition, ferroelastic domain switching occurred via an intermediate multidomain state. To investigate these switching dynamics under an electric field, we used in situ fluorescent X-ray induced Kossel line pattern measurements with synchrotron radiation. In addition, in situ inverse X-ray fluorescence holography (XFH) experiments revealed that atomic displacement occurred under an applied electric field. We attributed the atomic displacement to crystallographic tilting induced by a converse piezoelectric effect. Our findings provide important insights for the design of piezoelectric and ferroelectric materials and devices.