Understanding the metal-semiconductor heterostructure interface is crucial for the development of spintronic devices. One of the prospective candidates and extensively studied semiconductors is molybdenum disulfide (MoS \(_{2}\) ). Herein, utilizing Kerr microscopy, we investigated the impact of thick MoS \(_{2}\) on the magnetic properties of the 10 nm Co layer. A comparative study on \(\hbox {Co}/\hbox {MoS}_{2}\) and Co/Si shows that coercivity increased by 77% and the Kerr signal decreased by 26% compared to Co grown on Si substrate. In addition, the Co domain structure significantly changed when grown on MoS \(_{2}\) . The plausible reason for the observed magnetic behavior can be that the Co interacts differently at the interface of MoS \(_{2}\) as compared to Si. Therefore, our studies investigate the interfacial effect on the magnetic properties of Co grown on thick MoS \(_{2}\) layer. Furthermore, our results will help in developing next-generation spintronic devices.
