<p>Surface acoustic waves (SAWs) enable a wide array of technologies, including radiofrequency filters<sup><CitationRef CitationID="CR1">1</CitationRef>,<CitationRef CitationID="CR2">2</CitationRef></sup>, chemical and biological sensors<sup><CitationRef AdditionalCitationIDS="CR4" CitationID="CR3">3</CitationRef>–<CitationRef CitationID="CR5">5</CitationRef></sup>, acousto-optic devices<sup><CitationRef AdditionalCitationIDS="CR7" CitationID="CR6">6</CitationRef>–<CitationRef CitationID="CR8">8</CitationRef></sup>, acoustic control of microfluidic flow in lab-on-a-chip systems<sup><CitationRef AdditionalCitationIDS="CR10" CitationID="CR9">9</CitationRef>–<CitationRef CitationID="CR11">11</CitationRef></sup> and quantum phononics<sup><CitationRef AdditionalCitationIDS="CR13 CR14 CR15 CR16 CR17 CR18" CitationID="CR12">12</CitationRef>–<CitationRef CitationID="CR19">19</CitationRef></sup>. Although numerous methods exist for generating SAWs, they each have intrinsic limitations that inhibit performance, operation at high frequencies and use in systems constrained in size, weight and power. Here we present a completely solid-state, single-chip SAW phonon laser consisting of a lithium niobate SAW resonator with an internal, d.c. electrically injected and broadband semiconductor gain medium with &lt;0.15 mm<sup>2</sup> footprint. Below the threshold bias of 36 V, the device behaves as a resonant amplifier, and above it exhibits self-sustained coherent oscillation, linewidth narrowing and high output powers. A continuous on-chip acoustic output power of up to −6.1 dBm is generated at 1 GHz with a resolution-limited linewidth of &lt;77 Hz and a carrier phase noise of −57 dBc Hz<sup>−1</sup> at 1 kHz offset. Through detailed modelling, we show pathways for improving the performance of these devices, including mHz linewidths, high power efficiencies and footprints under 550 μm<sup>2</sup> at 10 GHz. This demonstration paves the way for ultrahigh-frequency SAW sources on-chip and highly miniaturized SAW-based systems that can be operated without an external radiofrequency source.</p>

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An electrically injected solid-state surface acoustic wave phonon laser

  • Alexander Wendt,
  • Matthew J. Storey,
  • Michael Miller,
  • Dalton Anderson,
  • Eric Chatterjee,
  • William Horrocks,
  • Brandon Smith,
  • Ping-Show Wong,
  • Shawn Arterburn,
  • Thomas A. Friedmann,
  • Lisa Hackett,
  • Matt Eichenfield

摘要

Surface acoustic waves (SAWs) enable a wide array of technologies, including radiofrequency filters1,2, chemical and biological sensors35, acousto-optic devices68, acoustic control of microfluidic flow in lab-on-a-chip systems911 and quantum phononics1219. Although numerous methods exist for generating SAWs, they each have intrinsic limitations that inhibit performance, operation at high frequencies and use in systems constrained in size, weight and power. Here we present a completely solid-state, single-chip SAW phonon laser consisting of a lithium niobate SAW resonator with an internal, d.c. electrically injected and broadband semiconductor gain medium with <0.15 mm2 footprint. Below the threshold bias of 36 V, the device behaves as a resonant amplifier, and above it exhibits self-sustained coherent oscillation, linewidth narrowing and high output powers. A continuous on-chip acoustic output power of up to −6.1 dBm is generated at 1 GHz with a resolution-limited linewidth of <77 Hz and a carrier phase noise of −57 dBc Hz−1 at 1 kHz offset. Through detailed modelling, we show pathways for improving the performance of these devices, including mHz linewidths, high power efficiencies and footprints under 550 μm2 at 10 GHz. This demonstration paves the way for ultrahigh-frequency SAW sources on-chip and highly miniaturized SAW-based systems that can be operated without an external radiofrequency source.