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Evidence of the fractional quantum spin Hall effect in moiré MoTe2

  • Kaifei Kang,
  • Bowen Shen,
  • Yichen Qiu,
  • Yihang Zeng,
  • Zhengchao Xia,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • Jie Shan,
  • Kin Fai Mak

摘要

Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap similar to an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities16. So far, experimental studies have found only integer QSH insulators with counter-propagating up-spins and down-spins at each edge leading to a quantized conductance G0 = e2/h (with e and h denoting the electron charge and Planck’s constant, respectively)714. Here we report transport evidence of a fractional QSH insulator in 2.1° twisted bilayer MoTe2, which supports spin-Sz conservation and flat spin-contrasting Chern bands15,16. At filling factor ν = 3 of the moiré valence bands, each edge contributes a conductance \(\frac{3}{2}{G}_{0}\) 3 2 G 0 with zero anomalous Hall conductivity. The state is probably a time-reversal pair of the even-denominator 3/2-fractional Chern insulators. Furthermore, at ν= 2, 4 and 6, we observe a single, double and triple QSH insulator with each edge contributing a conductance G0, 2G0 and 3G0, respectively. Our results open up the possibility of realizing time-reversal symmetric non-abelian anyons and other unexpected topological phases in highly tunable moiré materials1719.