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<p>Directional light emitters are vital to enhancing the out-coupling efficiency of light-emitting devices. Having asymmetric atomic arrangements or crystalline structures is an important precondition for being directional light emitters; therefore, it is theoretically impossible to achieve directional light emission in quasi-spherical quantum dots with isotropic crystalline structures, such as zinc-blende. Here we discover that this limitation can be lifted by introducing stacking faults, which break the high crystalline symmetry of zinc-blende quantum dots, enabling preferential orientation of transition dipoles and directional light emission. As a result, we achieved enhanced light out-coupling efficiency in light-emitting diodes using zinc-blende quantum dots and obtained high external quantum efficiencies of 34.3% and 31.0% in green CdZnSe- and InP-based quantum dot light-emitting diodes, respectively.</p>

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Crystalline symmetry breaking enables directional light emission in quantum dots

  • 期刊论文

  • 发表日期：

    2026年6月2日

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  • Huaiyu Xu,
  • Ying Xie,
  • Lei Wang,
  • Yaobo Li,
  • Fei Chen,
  • Leilei Zhao,
  • Changde Jin,
  • Jiahui Sun,
  • Yangyang Bian,
  • Qian Li,
  • Wei Xu,
  • Yingguo Yang,
  • Yang Song,
  • Zaiping Zeng,
  • Huaibin Shen,
  • Fengjia Fan

摘要

Directional light emitters are vital to enhancing the out-coupling efficiency of light-emitting devices. Having asymmetric atomic arrangements or crystalline structures is an important precondition for being directional light emitters; therefore, it is theoretically impossible to achieve directional light emission in quasi-spherical quantum dots with isotropic crystalline structures, such as zinc-blende. Here we discover that this limitation can be lifted by introducing stacking faults, which break the high crystalline symmetry of zinc-blende quantum dots, enabling preferential orientation of transition dipoles and directional light emission. As a result, we achieved enhanced light out-coupling efficiency in light-emitting diodes using zinc-blende quantum dots and obtained high external quantum efficiencies of 34.3% and 31.0% in green CdZnSe- and InP-based quantum dot light-emitting diodes, respectively.