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<p>Photonic memristors based on two-dimensional materials are emerging as critical components for ultrascalable, energy-efficient artificial vision systems, integrating opto-sensing, data storage and processing capabilities. However, existing devices typically exhibit narrow spectral response ranges and operate in a single mode (for example, non-volatility), limiting their applications in complex computing scenarios. Here we introduce photonic memristor arrays based on a wafer-scale hexagonal boron nitride (hBN)/silicon (Si) heterostructure. These memristors are developed via in situ, low-temperature (250 °C), large-area growth of highly homogeneous hBN films on Si-based substrates. The devices exhibit opto-reconfigurability across a broad spectral range from ultraviolet to near infrared. By adjusting the incident laser power, the device can be reconfigured between non-resistive-switching, volatile and non-volatile modes. This light-induced reconfigurability is attributed to the formation of conductive filaments through interactions between hydrogen ions and photogenerated electrons within the engineered hBN/Si heterostructures. Furthermore, the photonic memristor features a switching ratio exceeding 10<sup>9</sup>, retention time surpassing 40,000 s, endurance over 10<sup>6</sup> cycles and thermal stability up to 300 °C. These findings provide a scalable solution for developing integrated sensing–storage–computation artificial vision systems, fully compatible with sophisticated Si-based semiconductor technologies.</p>

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Ultrawide-bandwidth boron nitride photonic memristors

  • 期刊论文

  • 发表日期：

    2025年7月31日

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  • Maolin Chen,
  • Yinchang Ma,
  • Nabeel Aslam,
  • Chen Liu,
  • Yiqiang Chen,
  • Linqu Luo,
  • Xiaowen Zhang,
  • Kairan Mai,
  • Han Xiao,
  • Kaichen Zhu,
  • Osamah Alharbi,
  • Dongxing Zheng,
  • Xiangming Xu,
  • Hanguang Liao,
  • Yiming Yang,
  • Heng Wang,
  • Zhican Zhou,
  • Hanwen Wang,
  • Bo Tian,
  • Junzhu Li,
  • Xin He,
  • Kai Chang,
  • Yating Wan,
  • Atif Shamim,
  • Husam N. Alshareef,
  • Mario Lanza,
  • Thomas D. Anthopoulos,
  • Zheng Han,
  • Fei Xue,
  • Xixiang Zhang

摘要

Photonic memristors based on two-dimensional materials are emerging as critical components for ultrascalable, energy-efficient artificial vision systems, integrating opto-sensing, data storage and processing capabilities. However, existing devices typically exhibit narrow spectral response ranges and operate in a single mode (for example, non-volatility), limiting their applications in complex computing scenarios. Here we introduce photonic memristor arrays based on a wafer-scale hexagonal boron nitride (hBN)/silicon (Si) heterostructure. These memristors are developed via in situ, low-temperature (250 °C), large-area growth of highly homogeneous hBN films on Si-based substrates. The devices exhibit opto-reconfigurability across a broad spectral range from ultraviolet to near infrared. By adjusting the incident laser power, the device can be reconfigured between non-resistive-switching, volatile and non-volatile modes. This light-induced reconfigurability is attributed to the formation of conductive filaments through interactions between hydrogen ions and photogenerated electrons within the engineered hBN/Si heterostructures. Furthermore, the photonic memristor features a switching ratio exceeding 109, retention time surpassing 40,000 s, endurance over 106 cycles and thermal stability up to 300 °C. These findings provide a scalable solution for developing integrated sensing–storage–computation artificial vision systems, fully compatible with sophisticated Si-based semiconductor technologies.