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<p>Magnetic random-access memory that uses magnetic tunnel junction memory cells is a high-performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today, its speed is limited by the high magnetization of the memory storage layer. Here we prepare magnetic tunnel junction memory devices with a low magnetization ferrimagnetic Heusler alloy Mn<sub>3</sub>Ge as the memory storage layer on technologically relevant amorphous substrates using a combination of a nitride seed layer and a chemical templating layer. We switch the magnetic state of the storage layer with nanosecond long write pulses at a reliable write error rate of 10<sup>−7</sup> and detect a tunnelling magnetoresistance of 87% at ambient temperature. These results provide a strategy towards lower write switching currents using ferrimagnetic Heusler materials and, therefore, to the scaling of high-performance magnetic random-access memories beyond those nodes possible with ferromagnetic memory layers.</p>

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Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月3日

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  • Chirag Garg,
  • Panagiotis Ch. Filippou,
  • Ikhtiar,
  • Yari Ferrante,
  • See-Hun Yang,
  • Brian Hughes,
  • Charles T. Rettner,
  • Timothy Phung,
  • Sergey Faleev,
  • Teya Topuria,
  • Mahesh G. Samant,
  • Jaewoo Jeong,
  • Stuart S. P. Parkin

摘要

Magnetic random-access memory that uses magnetic tunnel junction memory cells is a high-performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today, its speed is limited by the high magnetization of the memory storage layer. Here we prepare magnetic tunnel junction memory devices with a low magnetization ferrimagnetic Heusler alloy Mn3Ge as the memory storage layer on technologically relevant amorphous substrates using a combination of a nitride seed layer and a chemical templating layer. We switch the magnetic state of the storage layer with nanosecond long write pulses at a reliable write error rate of 10−7 and detect a tunnelling magnetoresistance of 87% at ambient temperature. These results provide a strategy towards lower write switching currents using ferrimagnetic Heusler materials and, therefore, to the scaling of high-performance magnetic random-access memories beyond those nodes possible with ferromagnetic memory layers.