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<p>Single-crystal wafers of p-type two-dimensional (2D) semiconductors are highly desired for next-generation electronics. However, p-type 2D semiconductors remain scarce, and achieving wafer-scale monolayer single crystals of such materials is even more challenging. Here we report the wafer-scale growth of p-type semiconducting monolayer MoSi<sub>2</sub>N<sub>4</sub> single crystals on Cu (111) foils with prestored Mo and Si atoms. The &lt;110&gt; steps on Cu (111) guide the nucleation and unidirectional orientation of monolayer MoSi<sub>2</sub>N<sub>4</sub> domains, enabling their seamless stitching into a continuous single-crystal film. The resulting MoSi<sub>2</sub>N<sub>4</sub> exhibits exceptional quality, with an intrinsic mobility of 154 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. Field-effect transistor arrays fabricated from this material deliver excellent electrical performance, including an on/off ratio of ~3.8 ± 1.4 × 10<sup>6</sup> and an on-state current density up to ~17.96 μA μm<sup>−1</sup> (1 μm channel length), along with superior stability compared with monolayer WSe<sub>2</sub>-based counterparts. Furthermore, this versatile growth strategy also enables the fabrication of wafer-scale monolayer WSi<sub>2</sub>N<sub>4</sub> single crystals. This work establishes a promising p-type 2D semiconductor platform for future integrated circuits.</p>

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Wafer-scale growth of highly stable p-type semiconducting monolayer MoSi2N4 single crystals

  • 期刊论文

  • 发表日期：

    2026年7月8日

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  • Su Sun,
  • Chuan Xu,
  • Keqiang Ji,
  • Yuexing Xia,
  • Bo Tong,
  • Jinmeng Tong,
  • Chen Chen,
  • Wenqin Zhao,
  • Duanliang Zhou,
  • Qinghe Wang,
  • Lixin Yang,
  • Qiang Wang,
  • Miaomiao Li,
  • Biyuan Zheng,
  • Lai-Peng Ma,
  • Xinfeng Liu,
  • Zhibo Liu,
  • Mengjian Zhu,
  • Kaihui Liu,
  • Peng Liu,
  • Kaili Jiang,
  • Hui-Ming Cheng,
  • Wencai Ren

摘要

Single-crystal wafers of p-type two-dimensional (2D) semiconductors are highly desired for next-generation electronics. However, p-type 2D semiconductors remain scarce, and achieving wafer-scale monolayer single crystals of such materials is even more challenging. Here we report the wafer-scale growth of p-type semiconducting monolayer MoSi2N4 single crystals on Cu (111) foils with prestored Mo and Si atoms. The <110> steps on Cu (111) guide the nucleation and unidirectional orientation of monolayer MoSi2N4 domains, enabling their seamless stitching into a continuous single-crystal film. The resulting MoSi2N4 exhibits exceptional quality, with an intrinsic mobility of 154 cm2 V−1 s−1. Field-effect transistor arrays fabricated from this material deliver excellent electrical performance, including an on/off ratio of ~3.8 ± 1.4 × 106 and an on-state current density up to ~17.96 μA μm−1 (1 μm channel length), along with superior stability compared with monolayer WSe2-based counterparts. Furthermore, this versatile growth strategy also enables the fabrication of wafer-scale monolayer WSi2N4 single crystals. This work establishes a promising p-type 2D semiconductor platform for future integrated circuits.