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<p>Realizing Chern insulators with Chern numbers &gt;1 remains a major goal in quantum materials research. Such platforms promise multichannel dissipationless chiral transport and access to correlated phases beyond the conventional <i>C</i> = 1 paradigm. We discover high-Chern-number orbital magnets in twisted monolayer–multilayer rhombohedral graphene, denoted (1 + <i>n</i>) with <i>n</i> = 3, 4 and 5. Magnetotransport measurements show pronounced anomalous Hall effects at one and three electrons per moiré unit cell when they are polarized away from the moiré interface. Across these systems, we observe a clear topological hierarchy <i>C</i> = <i>n</i>, revealed by Středa trajectories and quantized Hall resistance, supported by self-consistent mean-field calculations. Moreover, we realize both electrical and magnetic switching of the high-Chern-number states by flipping the valley polarization. These results establish a tunable hierarchy of orbital Chern magnets in twisted rhombohedral graphene, offering systematic control of Chern number and topology through layer engineering in pristine graphene moiré systems.</p>

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High-Chern-number orbital magnetism in twisted rhombohedral graphene

  • 期刊论文

  • 发表日期：

    2026年7月3日

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  • Xirui Wang,
  • L. Antonio Benítez,
  • Skandaprasad Rao,
  • Võ Tiến Phong,
  • Wai In Chu,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • Cyprian Lewandowski,
  • Pablo Jarillo-Herrero

摘要

Realizing Chern insulators with Chern numbers >1 remains a major goal in quantum materials research. Such platforms promise multichannel dissipationless chiral transport and access to correlated phases beyond the conventional C = 1 paradigm. We discover high-Chern-number orbital magnets in twisted monolayer–multilayer rhombohedral graphene, denoted (1 + n) with n = 3, 4 and 5. Magnetotransport measurements show pronounced anomalous Hall effects at one and three electrons per moiré unit cell when they are polarized away from the moiré interface. Across these systems, we observe a clear topological hierarchy C = n, revealed by Středa trajectories and quantized Hall resistance, supported by self-consistent mean-field calculations. Moreover, we realize both electrical and magnetic switching of the high-Chern-number states by flipping the valley polarization. These results establish a tunable hierarchy of orbital Chern magnets in twisted rhombohedral graphene, offering systematic control of Chern number and topology through layer engineering in pristine graphene moiré systems.