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<p>Non-volatile memory technology holds great promise for data storage and near-memory or in-memory computing. However, significant challenges remain, including programming latency, energy consumption, stability and endurance of the storage medium. Here we report an Al<sub>0.7</sub>Sc<sub>0.3</sub>N-based non-volatile memory device that exhibits outstanding performance, including ultralow switching voltage (&lt;0.3 V), ultrafast write speed (&lt;3 ns) and ultralow energy consumption (&lt;150 fJ bit<sup>−1</sup>). In particular, the device demonstrates exceptional stability and reliability, achieving a write endurance exceeding 10<sup>8</sup> cycles at 583 K with minimal cycle-to-cycle and device-to-device variations. In situ scanning transmission electron microscopy analysis reveals that resistance switching is driven by an electric-field-induced phase transition between the wurtzite (high-resistance) and rocksalt (low-resistance) phases of Al<sub>0.7</sub>Sc<sub>0.3</sub>N. These results underscore the potential of electric-field-induced phase transition memory as a next-generation non-volatile memory solution, offering high speed, low power consumption and exceptional reliability—even under high temperatures—making it well suited for high-density data storage and advanced computing applications.</p>

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A nitride-based non-volatile memory enabled by electric-field-induced phase transition

  • 期刊论文

  • 发表日期：

    2026年4月16日

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  • Tao Zeng,
  • Zhongran Liu,
  • Youdi Gu,
  • Bingjie Dang,
  • Yuan Gao,
  • Tianlong Xu,
  • Peng Li,
  • Shu Shi,
  • Kaixuan Sun,
  • Yao Zhu,
  • Xiao Gong,
  • He Tian,
  • Jingsheng Chen

摘要

Non-volatile memory technology holds great promise for data storage and near-memory or in-memory computing. However, significant challenges remain, including programming latency, energy consumption, stability and endurance of the storage medium. Here we report an Al0.7Sc0.3N-based non-volatile memory device that exhibits outstanding performance, including ultralow switching voltage (<0.3 V), ultrafast write speed (<3 ns) and ultralow energy consumption (<150 fJ bit−1). In particular, the device demonstrates exceptional stability and reliability, achieving a write endurance exceeding 108 cycles at 583 K with minimal cycle-to-cycle and device-to-device variations. In situ scanning transmission electron microscopy analysis reveals that resistance switching is driven by an electric-field-induced phase transition between the wurtzite (high-resistance) and rocksalt (low-resistance) phases of Al0.7Sc0.3N. These results underscore the potential of electric-field-induced phase transition memory as a next-generation non-volatile memory solution, offering high speed, low power consumption and exceptional reliability—even under high temperatures—making it well suited for high-density data storage and advanced computing applications.