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<p>Magnons, the quanta of spin waves, have been extensively studied in a range of materials for spintronics, particularly for non-volatile logic-in-memory devices. Controlling magnons in conventional antiferromagnets and harnessing them in practical applications, however, remains a challenge. Here we demonstrate highly efficient magnon transport in a LaFeO<sub>3</sub>/BiFeO<sub>3</sub>/LaFeO<sub>3</sub> all-antiferromagnetic system, which can be controlled electrically, making it highly desirable for energy-efficient computation. Leveraging spin–orbit-driven spin–charge transduction, we demonstrate that this material architecture permits magnon confinement in ultrathin antiferromagnets, enhancing the output voltage generated by magnon transport by several orders of magnitude, which provides a pathway to enable magnetoelectric memory and logic functionalities. Additionally, the non-volatility of the output voltage enables ultralow-power logic-in-memory processing, where magnonic devices can be efficiently reconfigured via electrically controlled magnon spin currents within magnetoelectric channels.</p>

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Magnon confinement in epitaxial antiferromagnetic oxide heterostructures

  • 期刊论文

  • 发表日期：

    2026年3月6日

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  • Sajid Husain,
  • Maya Ramesh,
  • Xinyan Li,
  • Sergei Prokhorenko,
  • Shashank Kumar Ojha,
  • Aiden Ross,
  • Koushik Das,
  • Boyang Zhao,
  • Hyeon Woo Park,
  • Peter Meisenheimer,
  • Yousra Nahas,
  • Lucas Caretta,
  • Lane W. Martin,
  • Se Kwon Kim,
  • Zhi Yao,
  • Haidan Wen,
  • Sayeef Salahuddin,
  • Long-Qing Chen,
  • Yimo Han,
  • Rogério de Sousa,
  • Laurent Bellaiche,
  • Manuel Bibes,
  • Darrell G. Schlom,
  • Ramamoorthy Ramesh

摘要

Magnons, the quanta of spin waves, have been extensively studied in a range of materials for spintronics, particularly for non-volatile logic-in-memory devices. Controlling magnons in conventional antiferromagnets and harnessing them in practical applications, however, remains a challenge. Here we demonstrate highly efficient magnon transport in a LaFeO3/BiFeO3/LaFeO3 all-antiferromagnetic system, which can be controlled electrically, making it highly desirable for energy-efficient computation. Leveraging spin–orbit-driven spin–charge transduction, we demonstrate that this material architecture permits magnon confinement in ultrathin antiferromagnets, enhancing the output voltage generated by magnon transport by several orders of magnitude, which provides a pathway to enable magnetoelectric memory and logic functionalities. Additionally, the non-volatility of the output voltage enables ultralow-power logic-in-memory processing, where magnonic devices can be efficiently reconfigured via electrically controlled magnon spin currents within magnetoelectric channels.