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<p>In the past two decades, various classes of topological materials have been discovered, yet the deliberate control of topology in a single material remains largely unexplored. Here we demonstrate full experimental control over the topological nodal loop in the square-net material LaSb<sub><i>x</i></sub>Te<sub>2−<i>x</i></sub> by chemical substitution and electron doping. Using angle-resolved photoemission spectroscopy, we show that changing the antimony concentration <i>x</i> from 0.86 to 1.0 in the bulk opens a gap larger than 400 meV in the nodal loop. Symmetry analysis establishes that this effect originates from the breaking of <i>n</i> glide symmetry in the square-net layer. The same topological phase transition can also be driven reversibly on the surface of LaSb<sub><i>x</i></sub>Te<sub>2−<i>x</i></sub> by in situ chemical gating via potassium deposition, enabling on-demand switching of topology. The control parameter for both the bulk and surface transition is the electron concentration, providing a pathway towards applications based on switching topology by electrostatic gating.</p>

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Electronic switching of topology in LaSbTe

  • 期刊论文

  • 发表日期：

    2025年11月12日

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  • J. Bannies,
  • M. Michiardi,
  • H.-H. Kung,
  • S. Godin,
  • J. W. Simonson,
  • M. Oudah,
  • M. Zonno,
  • S. Gorovikov,
  • S. Zhdanovich,
  • I. S. Elfimov,
  • A. Damascelli,
  • M. C. Aronson

摘要

In the past two decades, various classes of topological materials have been discovered, yet the deliberate control of topology in a single material remains largely unexplored. Here we demonstrate full experimental control over the topological nodal loop in the square-net material LaSbxTe2−x by chemical substitution and electron doping. Using angle-resolved photoemission spectroscopy, we show that changing the antimony concentration x from 0.86 to 1.0 in the bulk opens a gap larger than 400 meV in the nodal loop. Symmetry analysis establishes that this effect originates from the breaking of n glide symmetry in the square-net layer. The same topological phase transition can also be driven reversibly on the surface of LaSbxTe2−x by in situ chemical gating via potassium deposition, enabling on-demand switching of topology. The control parameter for both the bulk and surface transition is the electron concentration, providing a pathway towards applications based on switching topology by electrostatic gating.