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<p>Interlayer stacking is an important degree of freedom to tune the properties of two-dimensional materials and offers enormous opportunities for designing functional devices. As a classic example, rhombohedral-stacked (3R) two-dimensional materials exhibit ferroelectricity and optical nonlinearity that are non-existent in naturally abundant hexagonal-stacked (2H) counterparts. However, the ability to grow stacking-controlled large-area films remains challenging due to the thermodynamic competition of different polytypes. Here we report the chemical vapour deposition growth of two-inch wafer-scale 3R-MoS<sub>2</sub> films with high phase purity by homoepitaxy on top of a crystalline monolayer MoS<sub>2</sub>. A defect-promoted nucleation mechanism was proposed, in which Mo-substituted sulfur vacancy is identified as one of the possible defects promoting 3R stacking. We fabricate ferroelectric semiconductor field-effect transistors with 3R-MoS<sub>2</sub> channels and demonstrate non-volatile memory characteristics. The control of interlayer stacking is an essential step towards the large-scale production of two-dimensional materials for multifunctional integration.</p>

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Homoepitaxial growth of large-area rhombohedral-stacked MoS2

  • 期刊论文

  • 发表日期：

    2025年7月9日

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  • Lei Liu,
  • Taotao Li,
  • Xiaoshu Gong,
  • Hengdi Wen,
  • Liqi Zhou,
  • Mingwei Feng,
  • Haotian Zhang,
  • Ningmu Zou,
  • Shengqiang Wu,
  • Yuhao Li,
  • Shitong Zhu,
  • Fulin Zhuo,
  • Xilu Zou,
  • Zehua Hu,
  • Zhiyuan Ding,
  • Susu Fang,
  • Weigao Xu,
  • Xingang Hou,
  • Kai Zhang,
  • Gen Long,
  • Lei Tang,
  • Yucheng Jiang,
  • Zhihao Yu,
  • Liang Ma,
  • Jinlan Wang,
  • Xinran Wang

摘要

Interlayer stacking is an important degree of freedom to tune the properties of two-dimensional materials and offers enormous opportunities for designing functional devices. As a classic example, rhombohedral-stacked (3R) two-dimensional materials exhibit ferroelectricity and optical nonlinearity that are non-existent in naturally abundant hexagonal-stacked (2H) counterparts. However, the ability to grow stacking-controlled large-area films remains challenging due to the thermodynamic competition of different polytypes. Here we report the chemical vapour deposition growth of two-inch wafer-scale 3R-MoS2 films with high phase purity by homoepitaxy on top of a crystalline monolayer MoS2. A defect-promoted nucleation mechanism was proposed, in which Mo-substituted sulfur vacancy is identified as one of the possible defects promoting 3R stacking. We fabricate ferroelectric semiconductor field-effect transistors with 3R-MoS2 channels and demonstrate non-volatile memory characteristics. The control of interlayer stacking is an essential step towards the large-scale production of two-dimensional materials for multifunctional integration.