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<p>Antiferromagnets as active components in devices have been attracting attention due to their negligible stray field and ultrafast magnetic dynamics, which are promising for high-density and fast memory devices. Although the switching of antiferromagnetic (AFM) order by current-induced spin–orbit torque (SOT) has already been realized, field-free SOT-induced bidirectional switching of AFM order in perpendicular geometry has been elusive. Here we experimentally demonstrate field-free perpendicular switching of the magnetic octupole <b>m</b><sub>oct</sub> in chiral AFM Mn<sub>3</sub>Sn by combining in-plane and out-of-plane SOTs generated by two-dimensional van der Vaals WTe<sub>2</sub>. The out-of-plane SOT breaks the in-plane inversion symmetry and leads to deterministic bidirectional switching of <b>m</b><sub>oct</sub> in polycrystalline Mn<sub>3</sub>Sn even without a fixed perpendicular <b>m</b><sub>oct</sub> easy axis. The switching ratio reaches up to 80% compared to 20–30% in polycrystalline Mn<sub>3</sub>Sn and the critical current density is reduced by an order of magnitude to around 1 MA cm<sup>−</sup><sup>2</sup>. Our work promotes the development of chiral AFM devices toward practical application.</p>

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All-electrical perpendicular switching of chiral antiferromagnetic order

  • 期刊论文

  • 发表日期：

    2025年4月29日

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  • Zhenyi Zheng,
  • Lanxin Jia,
  • Zhizhong Zhang,
  • Qia Shen,
  • Guowei Zhou,
  • Zhiwei Cui,
  • Lizhu Ren,
  • Zhiteng Chen,
  • Nur Fadilah Jamaludin,
  • Tieyang Zhao,
  • Rui Xiao,
  • Qihan Zhang,
  • Yi Du,
  • Liang Liu,
  • Silvija Gradečak,
  • Kostya S. Novoselov,
  • Weisheng Zhao,
  • Xiaohong Xu,
  • Yue Zhang,
  • Jingsheng Chen

摘要

Antiferromagnets as active components in devices have been attracting attention due to their negligible stray field and ultrafast magnetic dynamics, which are promising for high-density and fast memory devices. Although the switching of antiferromagnetic (AFM) order by current-induced spin–orbit torque (SOT) has already been realized, field-free SOT-induced bidirectional switching of AFM order in perpendicular geometry has been elusive. Here we experimentally demonstrate field-free perpendicular switching of the magnetic octupole moct in chiral AFM Mn3Sn by combining in-plane and out-of-plane SOTs generated by two-dimensional van der Vaals WTe2. The out-of-plane SOT breaks the in-plane inversion symmetry and leads to deterministic bidirectional switching of moct in polycrystalline Mn3Sn even without a fixed perpendicular moct easy axis. The switching ratio reaches up to 80% compared to 20–30% in polycrystalline Mn3Sn and the critical current density is reduced by an order of magnitude to around 1 MA cm−2. Our work promotes the development of chiral AFM devices toward practical application.