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<p>Solid-state thermoelectric technology presents a compelling solution for converting waste heat into electrical energy. However, its widespread application is hindered by long-term stability issues, particularly at the electrode–thermoelectric material interface. Here we address this challenge by constructing an atomic-scale direct bonding interface. By forming robust chemical bonds between Co and Sb atoms, we develop MgAgSb/Co thermoelectric junctions with a low interfacial resistivity (2.5 µΩ cm<sup>2</sup>), high bonding strength (60.6 MPa) and high thermal stability at 573 K. This thermally stable and ohmic contact interface enables MgAgSb-based thermoelectric modules to achieve a conversion efficiency of 10.2% at a temperature difference of 287 K and to exhibit negligible degradation over 1,440 h of thermal cycling. Our findings underscore the critical role of atomic-scale interface engineering in advancing thermoelectric semiconductor devices, enabling more efficient and durable thermoelectric modules.</p>

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Atomic-scale interface strengthening unlocks efficient and durable Mg-based thermoelectric devices

  • 期刊论文

  • 发表日期：

    2025年3月17日

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  • Wusheng Zuo,
  • Hongyi Chen,
  • Ziyi Yu,
  • Yuntian Fu,
  • Xin Ai,
  • Yanxiao Cheng,
  • Meng Jiang,
  • Shun Wan,
  • Zhengqian Fu,
  • Rui Liu,
  • Guofeng Cheng,
  • Rui Xu,
  • Lianjun Wang,
  • Fangfang Xu,
  • Qihao Zhang,
  • Denys Makarov,
  • Wan Jiang

摘要

Solid-state thermoelectric technology presents a compelling solution for converting waste heat into electrical energy. However, its widespread application is hindered by long-term stability issues, particularly at the electrode–thermoelectric material interface. Here we address this challenge by constructing an atomic-scale direct bonding interface. By forming robust chemical bonds between Co and Sb atoms, we develop MgAgSb/Co thermoelectric junctions with a low interfacial resistivity (2.5 µΩ cm2), high bonding strength (60.6 MPa) and high thermal stability at 573 K. This thermally stable and ohmic contact interface enables MgAgSb-based thermoelectric modules to achieve a conversion efficiency of 10.2% at a temperature difference of 287 K and to exhibit negligible degradation over 1,440 h of thermal cycling. Our findings underscore the critical role of atomic-scale interface engineering in advancing thermoelectric semiconductor devices, enabling more efficient and durable thermoelectric modules.