Scholarlink

<p>Atomically thin van der Waals (vdW) films provide a material platform for the epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here we report the double-sided epitaxy of vdW layered materials through atomic membranes. We grow vdW topological insulators Sb<sub>2</sub>Te<sub>3</sub> and Bi<sub>2</sub>Se<sub>3</sub> by molecular-beam epitaxy on both surfaces of atomically thin graphene or hexagonal boron nitride, which serve as suspended two-dimensional vdW substrate layers. Both homo- and hetero-double-sided vdW topological insulator tunnel junctions are fabricated, with the atomically thin hexagonal boron nitride acting as a crystal-momentum-conserving tunnelling barrier with abrupt and epitaxial interfaces. By performing field-angle-dependent magneto-tunnelling spectroscopy on these devices, we reveal the energy–momentum–spin resonance of massless Dirac electrons tunnelling between helical Landau levels developed in the topological surface states at the interfaces.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane

  • 期刊论文

  • 发表日期：

    2025年1月22日

查看全文
  • Joon Young Park,
  • Young Jae Shin,
  • Jeacheol Shin,
  • Jehyun Kim,
  • Janghyun Jo,
  • Hyobin Yoo,
  • Danial Haei,
  • Chohee Hyun,
  • Jiyoung Yun,
  • Robert M. Huber,
  • Arijit Gupta,
  • Kenji Watanabe,
  • Takashi Taniguchi,
  • Wan Kyu Park,
  • Hyeon Suk Shin,
  • Miyoung Kim,
  • Dohun Kim,
  • Gyu-Chul Yi,
  • Philip Kim

摘要

Atomically thin van der Waals (vdW) films provide a material platform for the epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here we report the double-sided epitaxy of vdW layered materials through atomic membranes. We grow vdW topological insulators Sb2Te3 and Bi2Se3 by molecular-beam epitaxy on both surfaces of atomically thin graphene or hexagonal boron nitride, which serve as suspended two-dimensional vdW substrate layers. Both homo- and hetero-double-sided vdW topological insulator tunnel junctions are fabricated, with the atomically thin hexagonal boron nitride acting as a crystal-momentum-conserving tunnelling barrier with abrupt and epitaxial interfaces. By performing field-angle-dependent magneto-tunnelling spectroscopy on these devices, we reveal the energy–momentum–spin resonance of massless Dirac electrons tunnelling between helical Landau levels developed in the topological surface states at the interfaces.