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<p>Batch production of single-crystal two-dimensional (2D) transition metal dichalcogenides is one prerequisite for the fabrication of next-generation integrated circuits. Contemporary strategies for the wafer-scale high-quality crystallinity of 2D materials centre on merging unidirectionally aligned, differently sized domains. However, an imperfectly merged area with a translational lattice brings about a high defect density and low device uniformity, which restricts the application of the 2D materials. Here we establish a liquid-to-solid crystallization in 2D space that can rapidly grow a centimetre-scale single-crystal MoS<sub>2</sub> domain with no grain boundaries. The large MoS<sub>2</sub> single crystal obtained shows superb uniformity and high quality with an ultra-low defect density. A statistical analysis of field effect transistors fabricated from the MoS<sub>2</sub> reveals a high device yield and minimal variation in mobility, positioning this FET as an advanced standard monolayer MoS<sub>2</sub> device. This 2D Czochralski method has implications for fabricating high-quality and scalable 2D semiconductor materials and devices.</p>

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Two-dimensional Czochralski growth of single-crystal MoS2

  • 期刊论文

  • 发表日期：

    2025年1月10日

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  • He Jiang,
  • Xiankun Zhang,
  • Kuanglei Chen,
  • Xiaoyu He,
  • Yihe Liu,
  • Huihui Yu,
  • Li Gao,
  • Mengyu Hong,
  • Yunan Wang,
  • Zheng Zhang,
  • Yue Zhang

摘要

Batch production of single-crystal two-dimensional (2D) transition metal dichalcogenides is one prerequisite for the fabrication of next-generation integrated circuits. Contemporary strategies for the wafer-scale high-quality crystallinity of 2D materials centre on merging unidirectionally aligned, differently sized domains. However, an imperfectly merged area with a translational lattice brings about a high defect density and low device uniformity, which restricts the application of the 2D materials. Here we establish a liquid-to-solid crystallization in 2D space that can rapidly grow a centimetre-scale single-crystal MoS2 domain with no grain boundaries. The large MoS2 single crystal obtained shows superb uniformity and high quality with an ultra-low defect density. A statistical analysis of field effect transistors fabricated from the MoS2 reveals a high device yield and minimal variation in mobility, positioning this FET as an advanced standard monolayer MoS2 device. This 2D Czochralski method has implications for fabricating high-quality and scalable 2D semiconductor materials and devices.