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<p>Annealing, while indispensable for achieving high-quality perovskite crystals, introduces strain into the material, undermining the stability of perovskite solar cells. Here we incorporate 1,4-butanesultam as an additive into the perovskite precursor film to address this issue. During annealing, the additive liquifies and promotes grain boundary reconstruction and crystal reorganization, resulting in large, strain-free perovskite grains. The liquid state also facilitates the conformal deposition of the self-assembled molecules that serve as a hole transport layer at the bottom surface of the perovskite, further minimizing tensile strain. The resulting solar cell achieves a power conversion efficiency of 26.79% and retains 95% of its initial efficiency after 1,000 h of ISOS-V-2 testing, as well as 98% after 1,500 h of diurnal cycling between dark at 20 °C and light at 85 °C.</p>

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Additive-assisted liquid medium annealing relieving strains in perovskite solar cells for improved stability

  • 期刊论文

  • 发表日期：

    2026年5月22日

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  • Xiaofeng Gao,
  • Xuefei Jia,
  • Yanping Mo,
  • Chao Wang,
  • Qi Li,
  • Tongle Bu,
  • Yi-Bing Cheng,
  • Fuzhi Huang

摘要

Annealing, while indispensable for achieving high-quality perovskite crystals, introduces strain into the material, undermining the stability of perovskite solar cells. Here we incorporate 1,4-butanesultam as an additive into the perovskite precursor film to address this issue. During annealing, the additive liquifies and promotes grain boundary reconstruction and crystal reorganization, resulting in large, strain-free perovskite grains. The liquid state also facilitates the conformal deposition of the self-assembled molecules that serve as a hole transport layer at the bottom surface of the perovskite, further minimizing tensile strain. The resulting solar cell achieves a power conversion efficiency of 26.79% and retains 95% of its initial efficiency after 1,000 h of ISOS-V-2 testing, as well as 98% after 1,500 h of diurnal cycling between dark at 20 °C and light at 85 °C.