Improving the stability of monolithic perovskite/silicon tandems against reverse-bias stress using graded dielectric layers
摘要
Perovskite/silicon tandem solar cells face critical stability challenges, including severe reverse-bias degradation under partial shading. Here we demonstrate that interfacial electric field discontinuity caused by the dielectric constant mismatch between the perovskite and C60 layer triggers abrupt voltage breakdown and accelerates instability. This dielectric mismatch drives carrier tunnelling and interface reactions under reverse bias. To mitigate these effects, we have introduced graded dielectric layers that smooth the electric field profile, correct abnormal band bending to reduce tunnelling current and inhibit halide ion accumulation. The tandem devices achieve efficiencies of 34.18% (certified: 33.76%) and 34.03% for silicon heterojunction and tunnel oxide passivated contact architectures, respectively, and retain over 92% of their initial efficiency after 1,000 h at −15 V. A large-area multicell string reaches 31.00% efficiency and maintains over 90% of the initial value after 1,000 h of shading stress. This work advances the development of perovskite/silicon tandem solar cells under real-world conditions.