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<p>The power conversion efficiency (PCE) of conventional tunnel oxide passivating contact (TOPCon) solar cells is fundamentally constrained by front-side recombination losses in both contact and non-contact regions. Here we demonstrate full-size bifacial TOPCon solar cells incorporating patterned front n-type TOPCon fingers and a full-area rear p-type TOPCon emitter, achieving a certified PCE of 26.34%. The devices exhibit excellent damp-heat stability and negligible light-induced degradation and light-and-elevated-temperature-induced degradation. These advances arise from the engineering of the front n-type TOPCon and rear bilayer p-type TOPCon contacts, enabled through controlled polycrystalline silicon crystallinity, dopant concentration, tunnel oxide properties and optimized silver paste formulation. Integrating this high-performance bifacial TOPCon bottom cell with a wide-bandgap perovskite top cell yields monolithic perovskite/TOPCon tandems with a certified PCE of 32.73% and an open-circuit voltage of 1.961 V. This work provides a scalable and industry-compatible pathway to higher-efficiency TOPCon and perovskite/TOPCon tandem photovoltaics.</p>

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Bifacial tunnel oxide passivating contacts for silicon and perovskite/silicon tandem solar cells with improved efficiency

  • 期刊论文

  • 发表日期：

    2026年3月11日

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  • Kun Gao,
  • Jie Mao,
  • Zhongshu Yang,
  • Shibo Wang,
  • Liu Yang,
  • Wei Shi,
  • Fengxian Cao,
  • Chang Wang,
  • Wenhao Li,
  • Bowen Yang,
  • Bo Gao,
  • Jungan Wang,
  • Peiting Zheng,
  • Menglei Xu,
  • Jie Yang,
  • Xinyu Zhang,
  • Chengbao Liu,
  • Daniel Macdonald,
  • Xinbo Yang,
  • Xiaohong Zhang

摘要

The power conversion efficiency (PCE) of conventional tunnel oxide passivating contact (TOPCon) solar cells is fundamentally constrained by front-side recombination losses in both contact and non-contact regions. Here we demonstrate full-size bifacial TOPCon solar cells incorporating patterned front n-type TOPCon fingers and a full-area rear p-type TOPCon emitter, achieving a certified PCE of 26.34%. The devices exhibit excellent damp-heat stability and negligible light-induced degradation and light-and-elevated-temperature-induced degradation. These advances arise from the engineering of the front n-type TOPCon and rear bilayer p-type TOPCon contacts, enabled through controlled polycrystalline silicon crystallinity, dopant concentration, tunnel oxide properties and optimized silver paste formulation. Integrating this high-performance bifacial TOPCon bottom cell with a wide-bandgap perovskite top cell yields monolithic perovskite/TOPCon tandems with a certified PCE of 32.73% and an open-circuit voltage of 1.961 V. This work provides a scalable and industry-compatible pathway to higher-efficiency TOPCon and perovskite/TOPCon tandem photovoltaics.