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<p>Wide-bandgap kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> offers an economically viable, sustainably sourced and environmentally friendly material for both single-junction and tandem photovoltaic applications. Nevertheless, since 2018 the record efficiency of such solar cells has stagnated at 11%, largely due to carriers recombining before they are collected. Here we demonstrate enhanced carrier collection in devices annealed in a hydrogen-containing atmosphere. We find that hydrogen is incorporated mainly in n-type layers and on the absorber surface. Furthermore, we show that the hydrogen treatment triggers the out-diffusion of oxygen and sodium from the absorber bulk to the surface, favourably diminishing the acceptor concentration at the surface and increasing the p-type doping in the bulk. Consequently, Fermi-level pinning is relieved and carrier transport in the absorber is facilitated. We achieve a certified efficiency of 11.4% in Cd-free devices. Although hydrogenation already plays a major role in silicon photovoltaics, our findings can further advance its application in emerging photovoltaic technologies.</p>

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Hydrogen-enhanced carrier collection enabling wide-bandgap Cd-free Cu2ZnSnS4 solar cells with 11.4% certified efficiency

  • 期刊论文

  • 发表日期：

    2025年1月13日

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  • Ao Wang,
  • Jialin Cong,
  • Shujie Zhou,
  • Jialiang Huang,
  • Jingwen Cao,
  • Xin Cui,
  • Xiaojie Yuan,
  • Yin Yao,
  • Zhou Xu,
  • Guojun He,
  • Jefferson Zhe Liu,
  • Julie M. Cairney,
  • Yi-sheng Chen,
  • Martin A. Green,
  • Su-Huai Wei,
  • Kaiwen Sun,
  • Xiaojing Hao

摘要

Wide-bandgap kesterite Cu2ZnSnS4 offers an economically viable, sustainably sourced and environmentally friendly material for both single-junction and tandem photovoltaic applications. Nevertheless, since 2018 the record efficiency of such solar cells has stagnated at 11%, largely due to carriers recombining before they are collected. Here we demonstrate enhanced carrier collection in devices annealed in a hydrogen-containing atmosphere. We find that hydrogen is incorporated mainly in n-type layers and on the absorber surface. Furthermore, we show that the hydrogen treatment triggers the out-diffusion of oxygen and sodium from the absorber bulk to the surface, favourably diminishing the acceptor concentration at the surface and increasing the p-type doping in the bulk. Consequently, Fermi-level pinning is relieved and carrier transport in the absorber is facilitated. We achieve a certified efficiency of 11.4% in Cd-free devices. Although hydrogenation already plays a major role in silicon photovoltaics, our findings can further advance its application in emerging photovoltaic technologies.